Pretilt angle control of carbon incorporated amorphous silicon oxide treated by ion beam irradiation

Kyung Chan Kim; Han Jin Ahn; Jong Bok Kim; Byoung Har Hwang; Jong Tae Kim; Hong Koo Baik

doi:10.1016/j.matchemphys.2007.05.023

Pretilt angle control of carbon incorporated amorphous silicon oxide treated by ion beam irradiation

Kyung Chan Kim, Han Jin Ahn, Jong Bok Kim, Byoung Har Hwang, Jong Tae Kim, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

For unidirectional uniform alignment of liquid crystals (LCs), alignment layer materials (ALMs) such as oblique evaporated SiO, rubbed polyimide (PI), UV-irradiated photopolymer, and IB-irradiated diamond like carbon (DLC) have been investigated. To overcome the demerits of the mechanical rubbing process, we used ion beam (IB)-treated carbon incorporated hydrogenated amorphous silicon oxide (a-SiO_xC_y:H) for the planar alignment. In this paper, we suggest a-SiO_xC_y:H treated by IB irradiation increases pretilt angle. As the amount of incorporated carbon is increased, pretilt angle is increased because of the change of surface energy. In addition, IB conditions such as IB irradiation time, angle, and energy affect the pretilt angle.

Original language	English
Pages (from-to)	54-57
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	106
Issue number	1
DOIs	https://doi.org/10.1016/j.matchemphys.2007.05.023
Publication status	Published - 2007 Nov 15

Bibliographical note

Funding Information:
This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation (KOSEF, Grant #R01-2006-000-11066-0). Authors are supported by the Brain Korea 21 (BK21) fellowship from the Ministry of Education of Korea.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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10.1016/j.matchemphys.2007.05.023

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@article{b4b7e66d6fdc498784ebac36186be7cb,

title = "Pretilt angle control of carbon incorporated amorphous silicon oxide treated by ion beam irradiation",

abstract = "For unidirectional uniform alignment of liquid crystals (LCs), alignment layer materials (ALMs) such as oblique evaporated SiO, rubbed polyimide (PI), UV-irradiated photopolymer, and IB-irradiated diamond like carbon (DLC) have been investigated. To overcome the demerits of the mechanical rubbing process, we used ion beam (IB)-treated carbon incorporated hydrogenated amorphous silicon oxide (a-SiOxCy:H) for the planar alignment. In this paper, we suggest a-SiOxCy:H treated by IB irradiation increases pretilt angle. As the amount of incorporated carbon is increased, pretilt angle is increased because of the change of surface energy. In addition, IB conditions such as IB irradiation time, angle, and energy affect the pretilt angle.",

author = "Kim, {Kyung Chan} and Ahn, {Han Jin} and Kim, {Jong Bok} and Hwang, {Byoung Har} and Kim, {Jong Tae} and Baik, {Hong Koo}",

note = "Funding Information: This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation (KOSEF, Grant #R01-2006-000-11066-0). Authors are supported by the Brain Korea 21 (BK21) fellowship from the Ministry of Education of Korea.",

year = "2007",

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doi = "10.1016/j.matchemphys.2007.05.023",

language = "English",

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journal = "Materials Chemistry and Physics",

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T1 - Pretilt angle control of carbon incorporated amorphous silicon oxide treated by ion beam irradiation

AU - Kim, Kyung Chan

AU - Ahn, Han Jin

AU - Kim, Jong Bok

AU - Hwang, Byoung Har

AU - Kim, Jong Tae

AU - Baik, Hong Koo

N1 - Funding Information: This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation (KOSEF, Grant #R01-2006-000-11066-0). Authors are supported by the Brain Korea 21 (BK21) fellowship from the Ministry of Education of Korea.

PY - 2007/11/15

Y1 - 2007/11/15

N2 - For unidirectional uniform alignment of liquid crystals (LCs), alignment layer materials (ALMs) such as oblique evaporated SiO, rubbed polyimide (PI), UV-irradiated photopolymer, and IB-irradiated diamond like carbon (DLC) have been investigated. To overcome the demerits of the mechanical rubbing process, we used ion beam (IB)-treated carbon incorporated hydrogenated amorphous silicon oxide (a-SiOxCy:H) for the planar alignment. In this paper, we suggest a-SiOxCy:H treated by IB irradiation increases pretilt angle. As the amount of incorporated carbon is increased, pretilt angle is increased because of the change of surface energy. In addition, IB conditions such as IB irradiation time, angle, and energy affect the pretilt angle.

AB - For unidirectional uniform alignment of liquid crystals (LCs), alignment layer materials (ALMs) such as oblique evaporated SiO, rubbed polyimide (PI), UV-irradiated photopolymer, and IB-irradiated diamond like carbon (DLC) have been investigated. To overcome the demerits of the mechanical rubbing process, we used ion beam (IB)-treated carbon incorporated hydrogenated amorphous silicon oxide (a-SiOxCy:H) for the planar alignment. In this paper, we suggest a-SiOxCy:H treated by IB irradiation increases pretilt angle. As the amount of incorporated carbon is increased, pretilt angle is increased because of the change of surface energy. In addition, IB conditions such as IB irradiation time, angle, and energy affect the pretilt angle.

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U2 - 10.1016/j.matchemphys.2007.05.023

DO - 10.1016/j.matchemphys.2007.05.023

M3 - Article

AN - SCOPUS:34748889688

SN - 0254-0584

VL - 106

SP - 54

EP - 57

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 1

ER -

Pretilt angle control of carbon incorporated amorphous silicon oxide treated by ion beam irradiation

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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