Preparation of platinum thin films by metalorganic chemical vapor deposition using oxygen-assisted decomposition of (ethylcyclopentadienyl) trimethylplatinum

Pt thin films were deposited by the O₂-assisted decomposition of an (ethylcyclopentadienyl) trimethylplatinum [(EtCp)PtMe₃] precursor, and their growth behavior was investigated by varying the amount of oxygen gas supply. An abrupt change from a very low growth rate to a significantly high growth rate was observed with an increase in O₂ feeding rate, which indicated that an oxygen gas supply above a threshold was required to obtain a continuous Pt film with an acceptable growth rate. Under the deposition conditions of a substrate temperature of 340°C and an O ₂ flow rate of 1000 seem, we successfully fabricated a Pt film with a smooth surface, (111)-preferred orientation, and low resistivity of 11.6 μΩ-cm on a 200-mm-diameter-wafer.