Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

Beom Ki Shin; Tae Il Lee; Ji Hyeon Park; Kang Il Park; Kyung Jun Ahn; Sung Kee Park; Woong Lee; Jae Min Myoung

doi:10.1016/j.apsusc.2011.08.128

Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

Beom Ki Shin, Tae Il Lee, Ji Hyeon Park, Kang Il Park, Kyung Jun Ahn, Sung Kee Park, Woong Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.

Original language	English
Pages (from-to)	834-838
Number of pages	5
Journal	Applied Surface Science
Volume	258
Issue number	2
DOIs	https://doi.org/10.1016/j.apsusc.2011.08.128
Publication status	Published - 2011 Nov 1

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT ( 10032091 , Development of the large-scale solar cell Equipment Technology) and by the R&BD Program of MKE/KIAT ( 2010-8-1075 ).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2011.08.128

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title = "Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications",

abstract = "Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.",

author = "Shin, {Beom Ki} and Lee, {Tae Il} and Park, {Ji Hyeon} and Park, {Kang Il} and Ahn, {Kyung Jun} and Park, {Sung Kee} and Woong Lee and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by the IT R&D program of MKE/KEIT ( 10032091 , Development of the large-scale solar cell Equipment Technology) and by the R&BD Program of MKE/KIAT ( 2010-8-1075 ).",

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AU - Shin, Beom Ki

AU - Lee, Tae Il

AU - Park, Ji Hyeon

AU - Park, Kang Il

AU - Ahn, Kyung Jun

AU - Park, Sung Kee

AU - Lee, Woong

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by the IT R&D program of MKE/KEIT ( 10032091 , Development of the large-scale solar cell Equipment Technology) and by the R&BD Program of MKE/KIAT ( 2010-8-1075 ).

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.

AB - Applicability of Ga-doped ZnO (GZO) films for thin film solar cells (TFSCs) was investigated by preparing GZO films via pulsed dc magnetron sputtering (PDMS) with rotating target. The GZO films showed improved crystallinity and increasing degree of Ga doping with increasing thickness to a limit of 1000 nm. The films also fulfilled requirements for the transparent electrodes of TFSCs in terms of electrical and optical properties. Moreover, the films exhibited good texturing potential based on etching studies with diluted HCl, which yielded an improved light trapping capability without significant degradation in electrical propreties. It is therefore suggested that the surface-textured GZO films prepared via PDMS and etching are promising candidates for indium-free transparent electrodes for TFSCs.

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Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

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Bibliographical note

All Science Journal Classification (ASJC) codes

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