Preparation and thermoelectric properties of heavily Nb-doped SrO (SrTiO3) 1 epitaxial films

Kyu Hyoung Lee, Akihiro Ishizaki, Sung Wng Kim, Hiromichi Ohta, Kunihito Koumoto

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21 Citations (Scopus)


We report the epitaxial film growth, by pulsed laser deposition, of c -axis-oriented Nb-doped SrO (SrTiO3) 1 films having a K2 NiF4 -type structure and their thermoelectric properties over a wide temperature range, from 20 to 800 K. High-resolution x-ray diffraction and reflection high energy electron diffraction patterns revealed that the films were grown heteroepitaxially on the (001) face of the LaAlO3 substrate. The thermoelectric properties of the Nb-doped SrO (SrTiO3) 1 epitaxial films were improved in terms of power factor compared to those for polycrystalline Nb-doped SrO (SrTiO3) 1. A theoretical analysis of the transport parameters revealed that the intrinsic transport occurred predominantly in the SrTiO3 layers.

Original languageEnglish
Article number033702
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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