Prediction of TDDB characteristics under constant current stresses

T. S. Cheung; W. Y. Choi; S. D. Lee; J. S. Yoon; B. R. Kim

doi:10.1049/el:19960798

Prediction of TDDB characteristics under constant current stresses

T. S. Cheung, W. Y. Choi, S. D. Lee, J. S. Yoon, B. R. Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A new breakdown model for gate oxides under constant current stresses is proposed, which directly relates the oxide lifetime to the stress current density and includes the statistical nature of oxide breakdown using the effective oxide thickness. It is shown that this model can reliably predict the TDDB of oxides for any current stress levels and oxide areas.

Original language	English
Pages (from-to)	1241-1242
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	13
DOIs	https://doi.org/10.1049/el:19960798
Publication status	Published - 1996 Jun 20

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19960798

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title = "Prediction of TDDB characteristics under constant current stresses",

abstract = "A new breakdown model for gate oxides under constant current stresses is proposed, which directly relates the oxide lifetime to the stress current density and includes the statistical nature of oxide breakdown using the effective oxide thickness. It is shown that this model can reliably predict the TDDB of oxides for any current stress levels and oxide areas.",

author = "Cheung, {T. S.} and Choi, {W. Y.} and Lee, {S. D.} and Yoon, {J. S.} and Kim, {B. R.}",

year = "1996",

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doi = "10.1049/el:19960798",

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journal = "Electronics Letters",

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T1 - Prediction of TDDB characteristics under constant current stresses

AU - Cheung, T. S.

AU - Choi, W. Y.

AU - Lee, S. D.

AU - Yoon, J. S.

AU - Kim, B. R.

PY - 1996/6/20

Y1 - 1996/6/20

N2 - A new breakdown model for gate oxides under constant current stresses is proposed, which directly relates the oxide lifetime to the stress current density and includes the statistical nature of oxide breakdown using the effective oxide thickness. It is shown that this model can reliably predict the TDDB of oxides for any current stress levels and oxide areas.

AB - A new breakdown model for gate oxides under constant current stresses is proposed, which directly relates the oxide lifetime to the stress current density and includes the statistical nature of oxide breakdown using the effective oxide thickness. It is shown that this model can reliably predict the TDDB of oxides for any current stress levels and oxide areas.

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DO - 10.1049/el:19960798

M3 - Article

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SP - 1241

EP - 1242

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Prediction of TDDB characteristics under constant current stresses

Abstract

All Science Journal Classification (ASJC) codes

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