Post-annealing of Al-doped ZnO films in hydrogen atmosphere

Byeong Yun Oh; Min Chang Jeong; Doo Soo Kim; Woong Lee; Jae Min Myoung

doi:10.1016/j.jcrysgro.2005.04.045

Post-annealing of Al-doped ZnO films in hydrogen atmosphere

Byeong Yun Oh, Min Chang Jeong, Doo Soo Kim, Woong Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

192 Citations (Scopus)

Abstract

Electrical properties of ZnO:Al films deposited on glass substrates by RF magnetron co-sputtering method have been modified by post-deposition annealing treatment in hydrogen atmosphere for potential transparent conductive oxide (TCO) applications. Annealing treatments were carried out at 573 K for compatibility with typical display device fabrication processes and annealing time was varied between 10 and 120 min. Whereas there were no significant changes in crystallinity of the films, resistivity decreased from 4.80×10^-3 to 8.30×10^-4 Ω cm and carrier concentration increased from 2.11×10²⁰ to 8.86×10 ²⁰ cm^-3 when annealing time was 60 min. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing treatment. The optical properties of the films, which change in accordance with the Burstein-Moss effect, are consistent with the observed changes in electrical properties.

Original language	English
Pages (from-to)	475-480
Number of pages	6
Journal	Journal of Crystal Growth
Volume	281
Issue number	2-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.04.045
Publication status	Published - 2005 Aug 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2005.04.045

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title = "Post-annealing of Al-doped ZnO films in hydrogen atmosphere",

abstract = "Electrical properties of ZnO:Al films deposited on glass substrates by RF magnetron co-sputtering method have been modified by post-deposition annealing treatment in hydrogen atmosphere for potential transparent conductive oxide (TCO) applications. Annealing treatments were carried out at 573 K for compatibility with typical display device fabrication processes and annealing time was varied between 10 and 120 min. Whereas there were no significant changes in crystallinity of the films, resistivity decreased from 4.80×10-3 to 8.30×10-4 Ω cm and carrier concentration increased from 2.11×1020 to 8.86×10 20 cm-3 when annealing time was 60 min. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing treatment. The optical properties of the films, which change in accordance with the Burstein-Moss effect, are consistent with the observed changes in electrical properties.",

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T1 - Post-annealing of Al-doped ZnO films in hydrogen atmosphere

AU - Oh, Byeong Yun

AU - Jeong, Min Chang

AU - Kim, Doo Soo

AU - Lee, Woong

AU - Myoung, Jae Min

PY - 2005/8/1

Y1 - 2005/8/1

N2 - Electrical properties of ZnO:Al films deposited on glass substrates by RF magnetron co-sputtering method have been modified by post-deposition annealing treatment in hydrogen atmosphere for potential transparent conductive oxide (TCO) applications. Annealing treatments were carried out at 573 K for compatibility with typical display device fabrication processes and annealing time was varied between 10 and 120 min. Whereas there were no significant changes in crystallinity of the films, resistivity decreased from 4.80×10-3 to 8.30×10-4 Ω cm and carrier concentration increased from 2.11×1020 to 8.86×10 20 cm-3 when annealing time was 60 min. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing treatment. The optical properties of the films, which change in accordance with the Burstein-Moss effect, are consistent with the observed changes in electrical properties.

AB - Electrical properties of ZnO:Al films deposited on glass substrates by RF magnetron co-sputtering method have been modified by post-deposition annealing treatment in hydrogen atmosphere for potential transparent conductive oxide (TCO) applications. Annealing treatments were carried out at 573 K for compatibility with typical display device fabrication processes and annealing time was varied between 10 and 120 min. Whereas there were no significant changes in crystallinity of the films, resistivity decreased from 4.80×10-3 to 8.30×10-4 Ω cm and carrier concentration increased from 2.11×1020 to 8.86×10 20 cm-3 when annealing time was 60 min. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing treatment. The optical properties of the films, which change in accordance with the Burstein-Moss effect, are consistent with the observed changes in electrical properties.

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Post-annealing of Al-doped ZnO films in hydrogen atmosphere

Abstract

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