TY - GEN
T1 - Possible applications of topological insulator thin films for tunnel FETs
AU - Chang, Jiwon
AU - Register, Leonard F.
AU - Banerjee, Sanjay K.
PY - 2012
Y1 - 2012
N2 - We have begun to explore the possibility of thin film three dimensional (3D) topological insulator (TI) based tunnel FETs (TFETs), specifically Bi 2Se 3 here, using quantum ballistic transport simulations with a tight-binding Hamiltonian in the atomic orbital basis including spin degrees of freedom. TI-based TFETs would be analogous in some ways to graphene nanoribbon TFETs, but without the sensitivity to ribbon width and edge roughness, and in some ways to narrow gap III-V TFETs but with substantially thinner quantum well widths.
AB - We have begun to explore the possibility of thin film three dimensional (3D) topological insulator (TI) based tunnel FETs (TFETs), specifically Bi 2Se 3 here, using quantum ballistic transport simulations with a tight-binding Hamiltonian in the atomic orbital basis including spin degrees of freedom. TI-based TFETs would be analogous in some ways to graphene nanoribbon TFETs, but without the sensitivity to ribbon width and edge roughness, and in some ways to narrow gap III-V TFETs but with substantially thinner quantum well widths.
UR - http://www.scopus.com/inward/record.url?scp=84866908772&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84866908772&partnerID=8YFLogxK
U2 - 10.1109/DRC.2012.6256984
DO - 10.1109/DRC.2012.6256984
M3 - Conference contribution
AN - SCOPUS:84866908772
SN - 9781467311618
T3 - Device Research Conference - Conference Digest, DRC
SP - 31
EP - 32
BT - 70th Device Research Conference, DRC 2012 - Conference Digest
T2 - 70th Device Research Conference, DRC 2012
Y2 - 18 June 2012 through 20 June 2012
ER -