Positive effects of a Schottky-type diode on unidirectional resistive switching devices

Dong Kyu Lee; Gun Hwan Kim; Hyunchul Sohn; Min Kyu Yang

doi:10.1063/1.5133868

Positive effects of a Schottky-type diode on unidirectional resistive switching devices

Dong Kyu Lee, Gun Hwan Kim, Hyunchul Sohn, Min Kyu Yang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this research, 1-diode (1D), 1-resistor (1R), and 1D1R stacked devices were separately fabricated using a 400 nm diameter hole substrate. It was observed that, in 1D1R, there was a fivefold increase in endurance and 52% improvement in the resistance distribution characteristics compared to those of 1R. It could be surmised that the stacked diode not only plays the role of a selection device to minimize the interference in the crossbar array type resistive switching device but also acts as an external load resistor to suppress the unexpected current overflow during resistance transition. These experimental results demonstrated that the optimized diode shows significant promise as a unidirectional resistive switching device for memory-related applications.

Original language	English
Article number	263502
Journal	Applied Physics Letters
Volume	115
Issue number	26
DOIs	https://doi.org/10.1063/1.5133868
Publication status	Published - 2019 Dec 23

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. NRF-2019R1F1A1060272).

Publisher Copyright:
© 2019 Author(s).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.5133868

Cite this

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abstract = "In this research, 1-diode (1D), 1-resistor (1R), and 1D1R stacked devices were separately fabricated using a 400 nm diameter hole substrate. It was observed that, in 1D1R, there was a fivefold increase in endurance and 52% improvement in the resistance distribution characteristics compared to those of 1R. It could be surmised that the stacked diode not only plays the role of a selection device to minimize the interference in the crossbar array type resistive switching device but also acts as an external load resistor to suppress the unexpected current overflow during resistance transition. These experimental results demonstrated that the optimized diode shows significant promise as a unidirectional resistive switching device for memory-related applications.",

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AU - Kim, Gun Hwan

AU - Sohn, Hyunchul

AU - Yang, Min Kyu

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. NRF-2019R1F1A1060272). Publisher Copyright: © 2019 Author(s).

PY - 2019/12/23

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N2 - In this research, 1-diode (1D), 1-resistor (1R), and 1D1R stacked devices were separately fabricated using a 400 nm diameter hole substrate. It was observed that, in 1D1R, there was a fivefold increase in endurance and 52% improvement in the resistance distribution characteristics compared to those of 1R. It could be surmised that the stacked diode not only plays the role of a selection device to minimize the interference in the crossbar array type resistive switching device but also acts as an external load resistor to suppress the unexpected current overflow during resistance transition. These experimental results demonstrated that the optimized diode shows significant promise as a unidirectional resistive switching device for memory-related applications.

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Positive effects of a Schottky-type diode on unidirectional resistive switching devices

Abstract

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