TY - JOUR
T1 - Polymorphism of Gd5Si2Ge2
T2 - The equivalence of temperature, magnetic field, and chemical and hydrostatic pressures
AU - Mudryk, Ya
AU - Lee, Y.
AU - Vogt, T.
AU - Gschneidner, K. A.
AU - Pecharsky, V. K.
PY - 2005
Y1 - 2005
N2 - The atomic scale details of the pressure-induced polymorphism of Gd5Si2Ge2 have been established by in situ x-ray powder diffraction. At room temperature, the monoclinic Gd5Si2Ge2 phase (β) is transformed to the orthorhombic α-Gd5Si2Ge2, observed previously as the low temperature, high magnetic field, or high silicon content polymorph. The transition occurs between ∼10 kbar and ∼20 kbar. Diffraction data provide the missing link in order to achieve a more complete understanding of how a structural change in a material can be induced by a variety of thermodynamic variables.
AB - The atomic scale details of the pressure-induced polymorphism of Gd5Si2Ge2 have been established by in situ x-ray powder diffraction. At room temperature, the monoclinic Gd5Si2Ge2 phase (β) is transformed to the orthorhombic α-Gd5Si2Ge2, observed previously as the low temperature, high magnetic field, or high silicon content polymorph. The transition occurs between ∼10 kbar and ∼20 kbar. Diffraction data provide the missing link in order to achieve a more complete understanding of how a structural change in a material can be induced by a variety of thermodynamic variables.
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U2 - 10.1103/PhysRevB.71.174104
DO - 10.1103/PhysRevB.71.174104
M3 - Article
AN - SCOPUS:28544441758
SN - 1098-0121
VL - 71
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 17
M1 - 174104
ER -