Polymer/YOx hybrid-sandwich gate dielectrics for semitransparent pentacene thin-film transistors operating under 5 V

Do Kyung Hwang; Chang Su Kim; Jeong Min Choi; Kimoon Lee; Ji Hoon Park; Eugene Kim; Hong Koo Baik; Jae Hoon Kim; Seongil Im

doi:10.1002/adma.200600409

Polymer/YO_x hybrid-sandwich gate dielectrics for semitransparent pentacene thin-film transistors operating under 5 V

Do Kyung Hwang, Chang Su Kim, Jeong Min Choi, Kimoon Lee, Ji Hoon Park, Eugene Kim, Hong Koo Baik, Jae Hoon Kim, Seongil Im

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

The fabrication and characterization of semitransparent pentacene-based Thin-Film Transistors (TFT) with thin poly(4-vinylphenol) (PVP)/high-k yttrium oxide (YO_x) sandwich gate dielectrics and with thermally evaporated semitransparent NiO_x source/drain (S/D) electrodes, were investigated. The current-density-electric-field (J-E) curve shows that the individual YO_x (100 nm) and PVP (70 nm) single layer films have very high leakage current. The crystallinity of the active pentacene channel was found to be influenced by the surface conditions of the substrate materials. A good pentacene crystal growth on double-layer gate dielectrics with PVP show that TFTs demonstrate desirable characteristics of field-effect mobility. The PVP/YO_x double layer has the potential to be used as a gate dielectric for realizing a low-operating-voltage pentacene TFT.

Original language	English
Pages (from-to)	2299-2303
Number of pages	5
Journal	Advanced Materials
Volume	18
Issue number	17
DOIs	https://doi.org/10.1002/adma.200600409
Publication status	Published - 2006 Sept 5

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "Polymer/YOx hybrid-sandwich gate dielectrics for semitransparent pentacene thin-film transistors operating under 5 V",

abstract = "The fabrication and characterization of semitransparent pentacene-based Thin-Film Transistors (TFT) with thin poly(4-vinylphenol) (PVP)/high-k yttrium oxide (YOx) sandwich gate dielectrics and with thermally evaporated semitransparent NiOx source/drain (S/D) electrodes, were investigated. The current-density-electric-field (J-E) curve shows that the individual YOx (100 nm) and PVP (70 nm) single layer films have very high leakage current. The crystallinity of the active pentacene channel was found to be influenced by the surface conditions of the substrate materials. A good pentacene crystal growth on double-layer gate dielectrics with PVP show that TFTs demonstrate desirable characteristics of field-effect mobility. The PVP/YOx double layer has the potential to be used as a gate dielectric for realizing a low-operating-voltage pentacene TFT.",

author = "Hwang, {Do Kyung} and Kim, {Chang Su} and Choi, {Jeong Min} and Kimoon Lee and Park, {Ji Hoon} and Eugene Kim and Baik, {Hong Koo} and Kim, {Jae Hoon} and Seongil Im",

year = "2006",

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doi = "10.1002/adma.200600409",

language = "English",

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T1 - Polymer/YOx hybrid-sandwich gate dielectrics for semitransparent pentacene thin-film transistors operating under 5 V

AU - Hwang, Do Kyung

AU - Kim, Chang Su

AU - Choi, Jeong Min

AU - Lee, Kimoon

AU - Park, Ji Hoon

AU - Kim, Eugene

AU - Baik, Hong Koo

AU - Kim, Jae Hoon

AU - Im, Seongil

PY - 2006/9/5

Y1 - 2006/9/5

N2 - The fabrication and characterization of semitransparent pentacene-based Thin-Film Transistors (TFT) with thin poly(4-vinylphenol) (PVP)/high-k yttrium oxide (YOx) sandwich gate dielectrics and with thermally evaporated semitransparent NiOx source/drain (S/D) electrodes, were investigated. The current-density-electric-field (J-E) curve shows that the individual YOx (100 nm) and PVP (70 nm) single layer films have very high leakage current. The crystallinity of the active pentacene channel was found to be influenced by the surface conditions of the substrate materials. A good pentacene crystal growth on double-layer gate dielectrics with PVP show that TFTs demonstrate desirable characteristics of field-effect mobility. The PVP/YOx double layer has the potential to be used as a gate dielectric for realizing a low-operating-voltage pentacene TFT.

AB - The fabrication and characterization of semitransparent pentacene-based Thin-Film Transistors (TFT) with thin poly(4-vinylphenol) (PVP)/high-k yttrium oxide (YOx) sandwich gate dielectrics and with thermally evaporated semitransparent NiOx source/drain (S/D) electrodes, were investigated. The current-density-electric-field (J-E) curve shows that the individual YOx (100 nm) and PVP (70 nm) single layer films have very high leakage current. The crystallinity of the active pentacene channel was found to be influenced by the surface conditions of the substrate materials. A good pentacene crystal growth on double-layer gate dielectrics with PVP show that TFTs demonstrate desirable characteristics of field-effect mobility. The PVP/YOx double layer has the potential to be used as a gate dielectric for realizing a low-operating-voltage pentacene TFT.

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JO - Advanced Materials

JF - Advanced Materials

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ER -

Polymer/YO_x hybrid-sandwich gate dielectrics for semitransparent pentacene thin-film transistors operating under 5 V

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