The fabrication and characterization of semitransparent pentacene-based Thin-Film Transistors (TFT) with thin poly(4-vinylphenol) (PVP)/high-k yttrium oxide (YOx) sandwich gate dielectrics and with thermally evaporated semitransparent NiOx source/drain (S/D) electrodes, were investigated. The current-density-electric-field (J-E) curve shows that the individual YOx (100 nm) and PVP (70 nm) single layer films have very high leakage current. The crystallinity of the active pentacene channel was found to be influenced by the surface conditions of the substrate materials. A good pentacene crystal growth on double-layer gate dielectrics with PVP show that TFTs demonstrate desirable characteristics of field-effect mobility. The PVP/YOx double layer has the potential to be used as a gate dielectric for realizing a low-operating-voltage pentacene TFT.
|Number of pages||5|
|Publication status||Published - 2006 Sept 5|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering