Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory

Jiyoun Chang; Chang Hak Shin; Youn Jung Park; Seok Ju Kang; Hee June Jeong; Kap Jin Kim; Craig J. Hawker; Thomas P. Russell; Du Yeol Ryu; Cheolmin Park

doi:10.1016/j.orgel.2009.04.005

Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory

Jiyoun Chang, Chang Hak Shin, Youn Jung Park, Seok Ju Kang, Hee June Jeong, Kap Jin Kim, Craig J. Hawker, Thomas P. Russell, Du Yeol Ryu, Cheolmin Park

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

A new polymeric gate dielectric interlayer of a cross-linkable poly(styrene-random-methylmethacrylate) copolymer is introduced with a good thermal and chemical resistance in bottom gate Ferroelectric Field Effect Transistor (FeFET) memory with pentacene active layer and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) one. A thin uniform PVDF-TrFE film was successfully formed with well defined ferroelectric microdomains on an interlayer. Thickness of the interlayer turns out to be one of the most important factors for controlling gate leakage current which is supposed to be minimized for high ON/OFF bistability of a FeFET memory. An interlayer inserted between gate electrode and PVDF-TrFE layer significantly reduces gate leakage current, leading to source-drain OFF current of approximately 10^-11 A in particular when its thickness becomes greater than approximately 25 nm. A reliable FeFET device shows a clockwise I-V hysteresis with drain current bistablility of 10³ at ±40 V gate voltage.

Original language	English
Pages (from-to)	849-856
Number of pages	8
Journal	Organic Electronics
Volume	10
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2009.04.005
Publication status	Published - 2009 Aug

Bibliographical note

Funding Information:
This project was supported by The National Research Program for the 0.1 Terabit Non-Volatile Memory Development and “SYSTEM2010” project sponsored by Korea Commerce, Industry and Energy and Samsung Electronics, Co., Ltd. This work was supported by the Second Stage of Brain Korea 21 Project in 2006 and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R11-2007-050-03001-0) DAPA and ADD.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2009.04.005

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Chang, J., Shin, C. H., Park, Y. J., Kang, S. J., Jeong, H. J., Kim, K. J., Hawker, C. J., Russell, T. P., Ryu, D. Y., & Park, C. (2009). Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory. Organic Electronics, 10(5), 849-856. https://doi.org/10.1016/j.orgel.2009.04.005

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title = "Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory",

abstract = "A new polymeric gate dielectric interlayer of a cross-linkable poly(styrene-random-methylmethacrylate) copolymer is introduced with a good thermal and chemical resistance in bottom gate Ferroelectric Field Effect Transistor (FeFET) memory with pentacene active layer and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) one. A thin uniform PVDF-TrFE film was successfully formed with well defined ferroelectric microdomains on an interlayer. Thickness of the interlayer turns out to be one of the most important factors for controlling gate leakage current which is supposed to be minimized for high ON/OFF bistability of a FeFET memory. An interlayer inserted between gate electrode and PVDF-TrFE layer significantly reduces gate leakage current, leading to source-drain OFF current of approximately 10-11 A in particular when its thickness becomes greater than approximately 25 nm. A reliable FeFET device shows a clockwise I-V hysteresis with drain current bistablility of 103 at ±40 V gate voltage.",

author = "Jiyoun Chang and Shin, {Chang Hak} and Park, {Youn Jung} and Kang, {Seok Ju} and Jeong, {Hee June} and Kim, {Kap Jin} and Hawker, {Craig J.} and Russell, {Thomas P.} and Ryu, {Du Yeol} and Cheolmin Park",

note = "Funding Information: This project was supported by The National Research Program for the 0.1 Terabit Non-Volatile Memory Development and “SYSTEM2010” project sponsored by Korea Commerce, Industry and Energy and Samsung Electronics, Co., Ltd. This work was supported by the Second Stage of Brain Korea 21 Project in 2006 and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R11-2007-050-03001-0) DAPA and ADD. ",

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PY - 2009/8

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N2 - A new polymeric gate dielectric interlayer of a cross-linkable poly(styrene-random-methylmethacrylate) copolymer is introduced with a good thermal and chemical resistance in bottom gate Ferroelectric Field Effect Transistor (FeFET) memory with pentacene active layer and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) one. A thin uniform PVDF-TrFE film was successfully formed with well defined ferroelectric microdomains on an interlayer. Thickness of the interlayer turns out to be one of the most important factors for controlling gate leakage current which is supposed to be minimized for high ON/OFF bistability of a FeFET memory. An interlayer inserted between gate electrode and PVDF-TrFE layer significantly reduces gate leakage current, leading to source-drain OFF current of approximately 10-11 A in particular when its thickness becomes greater than approximately 25 nm. A reliable FeFET device shows a clockwise I-V hysteresis with drain current bistablility of 103 at ±40 V gate voltage.

AB - A new polymeric gate dielectric interlayer of a cross-linkable poly(styrene-random-methylmethacrylate) copolymer is introduced with a good thermal and chemical resistance in bottom gate Ferroelectric Field Effect Transistor (FeFET) memory with pentacene active layer and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) one. A thin uniform PVDF-TrFE film was successfully formed with well defined ferroelectric microdomains on an interlayer. Thickness of the interlayer turns out to be one of the most important factors for controlling gate leakage current which is supposed to be minimized for high ON/OFF bistability of a FeFET memory. An interlayer inserted between gate electrode and PVDF-TrFE layer significantly reduces gate leakage current, leading to source-drain OFF current of approximately 10-11 A in particular when its thickness becomes greater than approximately 25 nm. A reliable FeFET device shows a clockwise I-V hysteresis with drain current bistablility of 103 at ±40 V gate voltage.

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Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memory

Abstract

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