Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Engineering

• Transistor 100%
• Polarity 41%
• Logic Circuit 33%
• Networks (Circuits) 16%
• Channel Transistor 16%
• Demonstrates 16%
• Inverter 16%
• Fabrication 8%
• Carrier Concentration 8%
• Electric Power Utilization 8%
• Circuit Design 8%
• Operating Principle 8%
• Simplifies 8%
• Building Block 8%
• Drain Voltage 8%
• Early Work 8%
• Stages 8%
• Continuous Transition 8%
• Led Device 8%

Physics

• Transition Metal Dichalcogenide 100%
• Oscillator 16%
• Tungsten 16%
• Circuits 16%
• Conduction Electron 8%
• Palladium 8%
• Fabrication 8%
• Metal 8%
• Injection 8%
• Statics 8%

Material Science

• Material 25%
• Carrier Concentration 8%
• Devices 8%