Point-Defect-Passivated MoS2 Nanosheet-Based High Performance Piezoelectric Nanogenerator

Sang A. Han, Tae Ho Kim, Sung Kyun Kim, Kang Hyuck Lee, Hye Jeong Park, Ju Hyuck Lee, Sang Woo Kim

Research output: Contribution to journalArticlepeer-review

146 Citations (Scopus)

Abstract

In this work, a sulfur (S) vacancy passivated monolayer MoS2 piezoelectric nanogenerator (PNG) is demonstrated, and its properties before and after S treatment are compared to investigate the effect of passivating S vacancy. The S vacancies are effectively passivated by using the S treatment process on the pristine MoS2 surface. The S vacancy site has a tendency to covalently bond with S functional groups; therefore, by capturing free electrons, a S atom will form a chemisorbed bond with the S vacancy site of MoS2. S treatment reduces the charge-carrier density of the monolayer MoS2 surface, thus the screening effect of piezoelectric polarization charges by free carrier is significantly prevented. As a result, the output peak current and voltage of the S-treated monolayer MoS2 nanosheet PNG are increased by more than 3 times (100 pA) and 2 times (22 mV), respectively. Further, the S treatment increases the maximum power by almost 10 times. The results suggest that S treatment can reduce free-charge carrier by sulfur S passivation and efficiently prevent the screening effect. Thus, the piezoelectric output peaks of current, voltage, and maximum power are dramatically increased, as compared with the pristine MoS2.

Original languageEnglish
Article number1800342
JournalAdvanced Materials
Volume30
Issue number21
DOIs
Publication statusPublished - 2018 May 24

Bibliographical note

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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