Playing with dimensions: Rational design for heteroepitaxial p-n junctions

Tae Il Lee; Sang Hoon Lee; Young Dong Kim; Woo Soon Jang; Jin Young Oh; Hong Koo Baik; Catherine Stampfl; Aloysius Soon; Jae Min Myoung

doi:10.1021/nl202963z

Playing with dimensions: Rational design for heteroepitaxial p-n junctions

Tae Il Lee, Sang Hoon Lee, Young Dong Kim, Woo Soon Jang, Jin Young Oh, Hong Koo Baik, Catherine Stampfl, Aloysius Soon, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-dimensional spinel structure in a low-temperature solution process was introduced, and it's capability was confirmed by successful fabrication of a diode consisting of p-type cobalt oxide (Co ₃O ₄) nanoplate/n-type zinc oxide (ZnO) nanorods, showing reasonable electrical performance. During thermal decomposition, the 30° rotated lattice orientation of Co ₃O ₄ nanoplates from the orientation of β-Co(OH) ₂ nanoplates was directly observed using high-resolution transmission electron microscopy. The epitaxial relations and the surface stress-induced ZnO nanowire growth on Co ₃O ₄ were well supported using the first-principles calculations. Over the large area, (0001) preferred oriented ZnO nanorods epitaxially grown on the (111) plane of Co ₃O ₄ nanoplates were experimentally obtained. Using this epitaxial p-n junction, a diode was fabricated. The ideality factor, turn-on voltage, and rectifying ratio of the diode were measured to be 2.38, 2.5 V and 10 ⁴, respectively.

Original language	English
Pages (from-to)	68-76
Number of pages	9
Journal	Nano letters
Volume	12
Issue number	1
DOIs	https://doi.org/10.1021/nl202963z
Publication status	Published - 2012 Jan 11

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl202963z

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title = "Playing with dimensions: Rational design for heteroepitaxial p-n junctions",

abstract = "A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-dimensional spinel structure in a low-temperature solution process was introduced, and it's capability was confirmed by successful fabrication of a diode consisting of p-type cobalt oxide (Co 3O 4) nanoplate/n-type zinc oxide (ZnO) nanorods, showing reasonable electrical performance. During thermal decomposition, the 30° rotated lattice orientation of Co 3O 4 nanoplates from the orientation of β-Co(OH) 2 nanoplates was directly observed using high-resolution transmission electron microscopy. The epitaxial relations and the surface stress-induced ZnO nanowire growth on Co 3O 4 were well supported using the first-principles calculations. Over the large area, (0001) preferred oriented ZnO nanorods epitaxially grown on the (111) plane of Co 3O 4 nanoplates were experimentally obtained. Using this epitaxial p-n junction, a diode was fabricated. The ideality factor, turn-on voltage, and rectifying ratio of the diode were measured to be 2.38, 2.5 V and 10 4, respectively.",

author = "Lee, {Tae Il} and Lee, {Sang Hoon} and Kim, {Young Dong} and Jang, {Woo Soon} and Oh, {Jin Young} and Baik, {Hong Koo} and Catherine Stampfl and Aloysius Soon and Myoung, {Jae Min}",

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AU - Oh, Jin Young

AU - Baik, Hong Koo

AU - Stampfl, Catherine

AU - Soon, Aloysius

AU - Myoung, Jae Min

PY - 2012/1/11

Y1 - 2012/1/11

N2 - A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-dimensional spinel structure in a low-temperature solution process was introduced, and it's capability was confirmed by successful fabrication of a diode consisting of p-type cobalt oxide (Co 3O 4) nanoplate/n-type zinc oxide (ZnO) nanorods, showing reasonable electrical performance. During thermal decomposition, the 30° rotated lattice orientation of Co 3O 4 nanoplates from the orientation of β-Co(OH) 2 nanoplates was directly observed using high-resolution transmission electron microscopy. The epitaxial relations and the surface stress-induced ZnO nanowire growth on Co 3O 4 were well supported using the first-principles calculations. Over the large area, (0001) preferred oriented ZnO nanorods epitaxially grown on the (111) plane of Co 3O 4 nanoplates were experimentally obtained. Using this epitaxial p-n junction, a diode was fabricated. The ideality factor, turn-on voltage, and rectifying ratio of the diode were measured to be 2.38, 2.5 V and 10 4, respectively.

AB - A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-dimensional spinel structure in a low-temperature solution process was introduced, and it's capability was confirmed by successful fabrication of a diode consisting of p-type cobalt oxide (Co 3O 4) nanoplate/n-type zinc oxide (ZnO) nanorods, showing reasonable electrical performance. During thermal decomposition, the 30° rotated lattice orientation of Co 3O 4 nanoplates from the orientation of β-Co(OH) 2 nanoplates was directly observed using high-resolution transmission electron microscopy. The epitaxial relations and the surface stress-induced ZnO nanowire growth on Co 3O 4 were well supported using the first-principles calculations. Over the large area, (0001) preferred oriented ZnO nanorods epitaxially grown on the (111) plane of Co 3O 4 nanoplates were experimentally obtained. Using this epitaxial p-n junction, a diode was fabricated. The ideality factor, turn-on voltage, and rectifying ratio of the diode were measured to be 2.38, 2.5 V and 10 4, respectively.

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Playing with dimensions: Rational design for heteroepitaxial p-n junctions

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