Plasma-enhanced atomic layer deposition of Co on metal surfaces

Jaehong Yoon; Jeong Gyu Song; Hyungjun Kim; Han Bo Ram Lee

doi:10.1016/j.surfcoat.2015.01.019

Plasma-enhanced atomic layer deposition of Co on metal surfaces

Jaehong Yoon, Jeong Gyu Song, Hyungjun Kim, Han Bo Ram Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Co thin films were deposited using plasma-enhanced atomic layer deposition (PE-ALD) on various substrates such as Ru, Ta, SiO₂, and Si. The growth characteristics of PE-ALD Co were investigated on the basis of their magnetic and electrical properties analyzed using a vibrating sample magnetometer (VSM) and four-point probe system, respectively. Compared to Co sputtering deposition, which provides a linear growth, the growth of PE-ALD Co varied on each substrate with increasing number of ALD cycles because of the surface-sensitive island growth. From the electrical properties, PE-ALD Co on a Ta substrate showed a growth mode different from those on other substrates. This difference was explained by the existence of a highly resistive interlayer, which was also directly observed via transmission electron microscopy. Since Ta was directly exposed to N₂/H₂ plasma during an initial island growth stage of Co, a Ta nitride interlayer was formed between Co and Ta.

Original language	English
Pages (from-to)	60-65
Number of pages	6
Journal	Surface and Coatings Technology
Volume	264
DOIs	https://doi.org/10.1016/j.surfcoat.2015.01.019
Publication status	Published - 2015 Feb 25

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program (industrial strategic technology development program, development of reliable fine-pitch metallization technologies) funded by the Ministry of Knowledge Economy (No. 10035430 ), and this research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF-2014R1A1A2059845 ). Also, This research was supported by Nano·Material Technology Development Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning .( 2009-0082580 ).

Publisher Copyright:
© 2015 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2015.01.019

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title = "Plasma-enhanced atomic layer deposition of Co on metal surfaces",

abstract = "Co thin films were deposited using plasma-enhanced atomic layer deposition (PE-ALD) on various substrates such as Ru, Ta, SiO2, and Si. The growth characteristics of PE-ALD Co were investigated on the basis of their magnetic and electrical properties analyzed using a vibrating sample magnetometer (VSM) and four-point probe system, respectively. Compared to Co sputtering deposition, which provides a linear growth, the growth of PE-ALD Co varied on each substrate with increasing number of ALD cycles because of the surface-sensitive island growth. From the electrical properties, PE-ALD Co on a Ta substrate showed a growth mode different from those on other substrates. This difference was explained by the existence of a highly resistive interlayer, which was also directly observed via transmission electron microscopy. Since Ta was directly exposed to N2/H2 plasma during an initial island growth stage of Co, a Ta nitride interlayer was formed between Co and Ta.",

author = "Jaehong Yoon and Song, {Jeong Gyu} and Hyungjun Kim and Lee, {Han Bo Ram}",

note = "Funding Information: This work was supported by the Technology Innovation Program (industrial strategic technology development program, development of reliable fine-pitch metallization technologies) funded by the Ministry of Knowledge Economy (No. 10035430 ), and this research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF-2014R1A1A2059845 ). Also, This research was supported by Nano·Material Technology Development Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning .( 2009-0082580 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

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doi = "10.1016/j.surfcoat.2015.01.019",

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AU - Yoon, Jaehong

AU - Song, Jeong Gyu

AU - Kim, Hyungjun

AU - Lee, Han Bo Ram

N1 - Funding Information: This work was supported by the Technology Innovation Program (industrial strategic technology development program, development of reliable fine-pitch metallization technologies) funded by the Ministry of Knowledge Economy (No. 10035430 ), and this research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF-2014R1A1A2059845 ). Also, This research was supported by Nano·Material Technology Development Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning .( 2009-0082580 ). Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/2/25

Y1 - 2015/2/25

N2 - Co thin films were deposited using plasma-enhanced atomic layer deposition (PE-ALD) on various substrates such as Ru, Ta, SiO2, and Si. The growth characteristics of PE-ALD Co were investigated on the basis of their magnetic and electrical properties analyzed using a vibrating sample magnetometer (VSM) and four-point probe system, respectively. Compared to Co sputtering deposition, which provides a linear growth, the growth of PE-ALD Co varied on each substrate with increasing number of ALD cycles because of the surface-sensitive island growth. From the electrical properties, PE-ALD Co on a Ta substrate showed a growth mode different from those on other substrates. This difference was explained by the existence of a highly resistive interlayer, which was also directly observed via transmission electron microscopy. Since Ta was directly exposed to N2/H2 plasma during an initial island growth stage of Co, a Ta nitride interlayer was formed between Co and Ta.

AB - Co thin films were deposited using plasma-enhanced atomic layer deposition (PE-ALD) on various substrates such as Ru, Ta, SiO2, and Si. The growth characteristics of PE-ALD Co were investigated on the basis of their magnetic and electrical properties analyzed using a vibrating sample magnetometer (VSM) and four-point probe system, respectively. Compared to Co sputtering deposition, which provides a linear growth, the growth of PE-ALD Co varied on each substrate with increasing number of ALD cycles because of the surface-sensitive island growth. From the electrical properties, PE-ALD Co on a Ta substrate showed a growth mode different from those on other substrates. This difference was explained by the existence of a highly resistive interlayer, which was also directly observed via transmission electron microscopy. Since Ta was directly exposed to N2/H2 plasma during an initial island growth stage of Co, a Ta nitride interlayer was formed between Co and Ta.

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JO - Surface and Coatings Technology

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Plasma-enhanced atomic layer deposition of Co on metal surfaces

Abstract

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