Plasma-Doped Si Nanosheets for Transistor and p-n Junction Application

Jaejun Lee, Juyoung Kwon, Dongjea Seo, Jukwan Na, Sangwon Park, Hyo Jung Lee, Seung Woo Lee, Ki Young Lee, Tae Eon Park, Heon Jin Choi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Since the discovery of graphene, layered transition metal dichalcogenides (TMDs) have been considered promising materials for applications in various fields because of their fascinating structural features and physical properties. Doping in semiconducting TMDs is essential for their practical application. In this regard, two-dimensional (2D) Si materials have emerged as a key component of 2D electronic, optics, sensing, and spintronic devices because of their complementary metal-oxide-semiconductor (CMOS) compatibility, high-quality oxide formation, moderated bandgap, and well-established doping techniques. Here, we report the tuning of the electronic properties of Si nanosheets (NSs) using a plasma-doping technique. Using this doping process, we fabricated p-n homojunction diodes and transistors with Si NSs. The estimated high ON/OFF ratio of 106 and field-effect hole mobility of 329 cm2 V-1 s-1 suggest a high crystal quality of the Si NSs. We also demonstrate vertically stacked heterostructured p-n junction diodes with MoS2, which exhibit rectifying properties and excellent light response.

Original languageEnglish
Pages (from-to)42512-42519
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number45
Publication statusPublished - 2019 Nov 13

Bibliographical note

Publisher Copyright:
© 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • General Materials Science


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