Physical properties of Y 2O 3 films fabricated by the reactive ionized cluster beam deposition technique

S. C. Choi, M. H. Cho, S. W. Whangbo, C. N. Whang, J. S. Jeon, S. I. Lee, M. Y. Lee

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Heteroepitaxial Y 2O 3 films on Si(100) were grown by the ionized cluster beam (ICB) deposition technique. The composition of the deposited film was investigated using Rutherford backscattering spectroscopy. The composition ratios of the Y 2O 3 films changed with changes in the deposition conditions. In the case of the film which was fabricated under optimum conditions, the ratio of Y to O was 1 to 1.55. The crystal orientational relation of the films deposited on a Si (100) substrate was investigated by using reflection high-energy electron diffraction. We found that the orientation of the deposited film changed mainly due to changes of the substrate temperature and the cluster acceleration energy. Y 2O 3 films were epitaxially grown above 800°C without acceleration, and heteroepitaxial growth of Y 2O 3 films on Si(100) substrates was possible with a 5-kV acceleration voltage above 650°C. The epitaxial relationship between Y 2O 3 and Si(100) was Y 2O 3(110)//Si(100) and Y 2O 3[110]//Si[100] or Y 2O 3(110)//Si(100) and Y 2O 3[100]//Si[100]. The I-V characteristics of Al/Y 2O 3/Si metal-insulator-semiconductor devices were investigated. After thermal annealing in an oxygen ambient, the measured value of the breakdown strength was more than 3 MV/cm and the leakage current was lower than 1 × 10 -10 A/cm 2.

Original languageEnglish
Pages (from-to)144-148
Number of pages5
JournalJournal of the Korean Physical Society
Issue number1
Publication statusPublished - 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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