Physical and electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacks for nonvolatile memory applications

Jinho Oh; Heedo Na; In Su Mok; Jonggi Kim; Kyumin Lee; Hyunchul Sohn

doi:10.1007/s00339-012-6950-2

Physical and electrical properties of band-engineered SiO ₂/(TiO ₂) _x (SiO ₂) _1-x stacks for nonvolatile memory applications

Jinho Oh, Heedo Na, In Su Mok, Jonggi Kim, Kyumin Lee, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In our study, the physical properties of (TiO ₂) _x (SiO ₂) _1-x, including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO ₂/(TiO ₂) _x (SiO ₂) _1-x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO ₂) _x (SiO ₂) _1-x can be controlled by adjustment in the composition of the (TiO ₂) _x (SiO ₂) _1-x films. Ti-silicate film with TiO ₂: SiO ₂ cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950°C. The tunneling current of the band-engineered SiO ₂/(TiO ₂) _x (SiO ₂) _1-x stacked tunnel barrier was larger than that of a single SiO ₂ barrier under a higher external bias, while the tunneling current of a SiO ₂/(TiO ₂) _x (SiO ₂) _1-x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO ₂/(TiO ₂) _x (SiO ₂) _1-x is slightly larger than that for single SiO ₂.

Original language	English
Pages (from-to)	679-684
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	108
Issue number	3
DOIs	https://doi.org/10.1007/s00339-012-6950-2
Publication status	Published - 2012 Sept

Bibliographical note

Funding Information:
This work was financially supported by the IT R&D program of MKE/KEIT (development of novel 3D stacked devices and core materials for the next generation flash memory) and the second stage of the Brain Korea 21 project (BK21).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

Access to Document

10.1007/s00339-012-6950-2

Cite this

@article{cf74f053cca9478b82f6daa5ef52ea3a,

title = "Physical and electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacks for nonvolatile memory applications",

abstract = "In our study, the physical properties of (TiO 2) x (SiO 2) 1-x, including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO 2) x (SiO 2) 1-x can be controlled by adjustment in the composition of the (TiO 2) x (SiO 2) 1-x films. Ti-silicate film with TiO 2: SiO 2 cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950°C. The tunneling current of the band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier was larger than that of a single SiO 2 barrier under a higher external bias, while the tunneling current of a SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO 2/(TiO 2) x (SiO 2) 1-x is slightly larger than that for single SiO 2.",

author = "Jinho Oh and Heedo Na and Mok, {In Su} and Jonggi Kim and Kyumin Lee and Hyunchul Sohn",

note = "Funding Information: This work was financially supported by the IT R&D program of MKE/KEIT (development of novel 3D stacked devices and core materials for the next generation flash memory) and the second stage of the Brain Korea 21 project (BK21).",

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doi = "10.1007/s00339-012-6950-2",

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AU - Oh, Jinho

AU - Na, Heedo

AU - Mok, In Su

AU - Kim, Jonggi

AU - Lee, Kyumin

AU - Sohn, Hyunchul

N1 - Funding Information: This work was financially supported by the IT R&D program of MKE/KEIT (development of novel 3D stacked devices and core materials for the next generation flash memory) and the second stage of the Brain Korea 21 project (BK21).

PY - 2012/9

Y1 - 2012/9

N2 - In our study, the physical properties of (TiO 2) x (SiO 2) 1-x, including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO 2) x (SiO 2) 1-x can be controlled by adjustment in the composition of the (TiO 2) x (SiO 2) 1-x films. Ti-silicate film with TiO 2: SiO 2 cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950°C. The tunneling current of the band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier was larger than that of a single SiO 2 barrier under a higher external bias, while the tunneling current of a SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO 2/(TiO 2) x (SiO 2) 1-x is slightly larger than that for single SiO 2.

AB - In our study, the physical properties of (TiO 2) x (SiO 2) 1-x, including band-gap, band-offset, and thermal stability and the electrical properties of band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x tunnel barrier stacks, including the tunneling current and charge-trapping characteristics for applications to nonvolatile memory devices were investigated. It was observed that the band-gap and band-offset of (TiO 2) x (SiO 2) 1-x can be controlled by adjustment in the composition of the (TiO 2) x (SiO 2) 1-x films. Ti-silicate film with TiO 2: SiO 2 cycle ratio of 1:5 was maintained in an amorphous phase, even after annealing at 950°C. The tunneling current of the band-engineered SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier was larger than that of a single SiO 2 barrier under a higher external bias, while the tunneling current of a SiO 2/(TiO 2) x (SiO 2) 1-x stacked tunnel barrier under a lower external bias was smaller. Charge-trapping tests showed that the voltage shift for SiO 2/(TiO 2) x (SiO 2) 1-x is slightly larger than that for single SiO 2.

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