Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems

Chang Soon Choi, Hyo Soon Kang, Woo Young Choi, Dae Hyun Kim, Kwang Seok Seo

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47 Citations (Scopus)


Phototransistors based on InP high electron-mobility transistors (HEMTs) are investigated for millimeter-wave radio-on-fiber system applications. By clarifying the photodetection mechanism in InP HEMTs, the phototransistor internal gain is determined. We present their use as millimeter-wave harmonic optoelectronic mixers and characterize them at the 60-GHz band. In order to evaluate the InP HEMT optoelectronic mixer performance, internal conversion gain is introduced and a maximum of 17 dB is obtained for 60-GHz harmonic optoelectronic up-conversion. Utilizing them, we construct a 60-GHz radio-on-fiber system and demonstrate 622-Mb/s data transmission over 30-km single-mode fiber and 3-m free space at 60-GHz band.

Original languageEnglish
Pages (from-to)256-262
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number1
Publication statusPublished - 2005 Jan

Bibliographical note

Funding Information:
Manuscript received April 21, 2004; revised August 25, 2004. This work was supported by the Ministry of Science and Technology of Korea under the National Research Laboratory Program. C.-S. Choi, H.-S. Kang, and W.-Y. Choi are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea (e-mail: D.-H. Kim and K.-S. Seo are with the School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea. Digital Object Identifier 10.1109/TMTT.2004.839323

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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