Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

Keun Woo Lee; Kon Yi Heo; Hyun Jae Kim

doi:10.1063/1.3098406

Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

Keun Woo Lee, Kon Yi Heo, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.

Original language	English
Article number	102112
Journal	Applied Physics Letters
Volume	94
Issue number	10
DOIs	https://doi.org/10.1063/1.3098406
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0) (2007).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3098406

Cite this

@article{ceaaa80375e74035bc515b942f6651dc,

title = "Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors",

abstract = "We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.",

author = "Lee, {Keun Woo} and Heo, {Kon Yi} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0) (2007).",

year = "2009",

doi = "10.1063/1.3098406",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

AU - Lee, Keun Woo

AU - Heo, Kon Yi

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0) (2007).

PY - 2009

Y1 - 2009

N2 - We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.

AB - We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.

UR - http://www.scopus.com/inward/record.url?scp=62549121253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62549121253&partnerID=8YFLogxK

U2 - 10.1063/1.3098406

DO - 10.1063/1.3098406

M3 - Article

AN - SCOPUS:62549121253

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102112

ER -

Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

Abstract

Bibliographical note

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