Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

H. Y. Kim, J. H. Kim, Y. J. Kim, K. H. Chae, C. N. Whang, J. H. Song, S. Im

Research output: Contribution to journalConference articlepeer-review

76 Citations (Scopus)


The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.

Original languageEnglish
Pages (from-to)141-144
Number of pages4
JournalOptical Materials
Issue number1-2
Publication statusPublished - 2001 Jun
EventOptoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France
Duration: 2000 May 302000 Jun 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • General Computer Science
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering


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