Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

H. Y. Kim; J. H. Kim; Y. J. Kim; K. H. Chae; C. N. Whang; J. H. Song; S. Im

doi:10.1016/S0925-3467(01)00037-4

Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

H. Y. Kim, J. H. Kim, Y. J. Kim, K. H. Chae, C. N. Whang, J. H. Song, S. Im

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

78 Citations (Scopus)

Abstract

The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.

Original language	English
Pages (from-to)	141-144
Number of pages	4
Journal	Optical Materials
Volume	17
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(01)00037-4
Publication status	Published - 2001 Jun
Event	Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France Duration: 2000 May 30 → 2000 Jun 2

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-3467(01)00037-4

Cite this

@article{4ea5112ccfba4219b0076ef507493293,

title = "Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures",

abstract = "The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.",

keywords = "Crystalline quality, Current-voltage, P-Si, Photocurrent, Photodiode, Sputtering, n-ZnO/n",

author = "Kim, {H. Y.} and Kim, {J. H.} and Kim, {Y. J.} and Chae, {K. H.} and Whang, {C. N.} and Song, {J. H.} and S. Im",

year = "2001",

month = jun,

doi = "10.1016/S0925-3467(01)00037-4",

language = "English",

volume = "17",

pages = "141--144",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

number = "1-2",

note = "Optoelectronics I: Materials and Technologies for Optoelectronic Devices ; Conference date: 30-05-2000 Through 02-06-2000",

}

TY - JOUR

T1 - Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

AU - Kim, H. Y.

AU - Kim, J. H.

AU - Kim, Y. J.

AU - Chae, K. H.

AU - Whang, C. N.

AU - Song, J. H.

AU - Im, S.

PY - 2001/6

Y1 - 2001/6

N2 - The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.

AB - The ZnO/Si photodiodes have been fabricated depositing n-ZnO films on n- and p-Si by rf sputtering method. All the n-ZnO/p-Si diodes show strong rectifying behavior characterized by the current-voltage (I-V) measurement under a dark condition while the n-ZnO/n-Si diodes showed weak rectifying behaviors. Photoelectric effects have been exhibited under an illuminated condition using a red light of 670 nm. High photocurrent or responsivities are obtained under a reverse bias when the crystalline quality of n-ZnO film is good enough to transmit the light into p-Si.

KW - Crystalline quality

KW - Current-voltage

KW - P-Si

KW - Photocurrent

KW - Photodiode

KW - Sputtering

KW - n-ZnO/n

UR - http://www.scopus.com/inward/record.url?scp=0035360402&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035360402&partnerID=8YFLogxK

U2 - 10.1016/S0925-3467(01)00037-4

DO - 10.1016/S0925-3467(01)00037-4

M3 - Conference article

AN - SCOPUS:0035360402

SN - 0925-3467

VL - 17

SP - 141

EP - 144

JO - Optical Materials

JF - Optical Materials

IS - 1-2

T2 - Optoelectronics I: Materials and Technologies for Optoelectronic Devices

Y2 - 30 May 2000 through 2 June 2000

ER -

Photoresponse of Si detector based on n-ZnO/p-Si and n-ZnO/n-Si structures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this