Photoresponse characteristics of vertically aligned ZnO nanowires

J. P. Kar; S. N. Das; J. H. Choi; T. I. Lee; J. M. Myoung

doi:10.1109/INEC.2010.5425109

Photoresponse characteristics of vertically aligned ZnO nanowires

J. P. Kar, S. N. Das, J. H. Choi, T. I. Lee, J. M. Myoung

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, vertically aligned ZnO nanowires were grown by metal organic chemical vapor deposition (MOCVD) method. The growth direction of vertically aligned nanowires was along c-axis. For monolithic integration, vertically aligned ZnO nanowires were grown on AlN/Si substrates with a higher aspect ratio in comparison to those on bare silicon substrates. In a separate experiment, micro-patterning of the nanowires was obtained by lift-off technique, where BaF₂ film was used as a sacrificial layer. ZnO nanowires based UV detectors were fabricated using silicon microchannel. Nanowires with higher aspect ratio exhibited the highest on-off current ratio and less photoresponse time.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	951-952
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5425109
Publication status	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/INEC.2010.5425109

Cite this

@inproceedings{a72a38cef3e74b94a0001bd3751a41da,

title = "Photoresponse characteristics of vertically aligned ZnO nanowires",

abstract = "In this study, vertically aligned ZnO nanowires were grown by metal organic chemical vapor deposition (MOCVD) method. The growth direction of vertically aligned nanowires was along c-axis. For monolithic integration, vertically aligned ZnO nanowires were grown on AlN/Si substrates with a higher aspect ratio in comparison to those on bare silicon substrates. In a separate experiment, micro-patterning of the nanowires was obtained by lift-off technique, where BaF2 film was used as a sacrificial layer. ZnO nanowires based UV detectors were fabricated using silicon microchannel. Nanowires with higher aspect ratio exhibited the highest on-off current ratio and less photoresponse time.",

author = "Kar, {J. P.} and Das, {S. N.} and Choi, {J. H.} and Lee, {T. I.} and Myoung, {J. M.}",

year = "2010",

doi = "10.1109/INEC.2010.5425109",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "951--952",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Kar, JP, Das, SN, Choi, JH, Lee, TI & Myoung, JM 2010, Photoresponse characteristics of vertically aligned ZnO nanowires. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5425109, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 951-952, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5425109

Photoresponse characteristics of vertically aligned ZnO nanowires. / Kar, J. P.; Das, S. N.; Choi, J. H. et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 951-952 5425109 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Photoresponse characteristics of vertically aligned ZnO nanowires

AU - Kar, J. P.

AU - Das, S. N.

AU - Choi, J. H.

AU - Lee, T. I.

AU - Myoung, J. M.

PY - 2010

Y1 - 2010

N2 - In this study, vertically aligned ZnO nanowires were grown by metal organic chemical vapor deposition (MOCVD) method. The growth direction of vertically aligned nanowires was along c-axis. For monolithic integration, vertically aligned ZnO nanowires were grown on AlN/Si substrates with a higher aspect ratio in comparison to those on bare silicon substrates. In a separate experiment, micro-patterning of the nanowires was obtained by lift-off technique, where BaF2 film was used as a sacrificial layer. ZnO nanowires based UV detectors were fabricated using silicon microchannel. Nanowires with higher aspect ratio exhibited the highest on-off current ratio and less photoresponse time.

AB - In this study, vertically aligned ZnO nanowires were grown by metal organic chemical vapor deposition (MOCVD) method. The growth direction of vertically aligned nanowires was along c-axis. For monolithic integration, vertically aligned ZnO nanowires were grown on AlN/Si substrates with a higher aspect ratio in comparison to those on bare silicon substrates. In a separate experiment, micro-patterning of the nanowires was obtained by lift-off technique, where BaF2 film was used as a sacrificial layer. ZnO nanowires based UV detectors were fabricated using silicon microchannel. Nanowires with higher aspect ratio exhibited the highest on-off current ratio and less photoresponse time.

UR - http://www.scopus.com/inward/record.url?scp=77951656392&partnerID=8YFLogxK

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U2 - 10.1109/INEC.2010.5425109

DO - 10.1109/INEC.2010.5425109

M3 - Conference contribution

AN - SCOPUS:77951656392

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 951

EP - 952

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Photoresponse characteristics of vertically aligned ZnO nanowires

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