Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing

Yoonsung Nam; Jengsu Yoo; Soo Kyung Chang; Jae Hyung Wi; Woo Jung Lee; Dae Hyung Cho; Yong Duck Chung

doi:10.1016/j.jlumin.2017.05.012

Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing

Yoonsung Nam, Jengsu Yoo, Soo Kyung Chang, Jae Hyung Wi, Woo Jung Lee, Dae Hyung Cho, Yong Duck Chung

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The photoluminescence (PL) of Cu(In,Ga)Se₂ solar cell with sputtered Zn(O,S) buffer layers annealed at various temperatures were measured. As the annealing temperature increased, the peak positions of PL spectra shifted to higher energies. The broad PL spectra were separated two or three emissions, which are suggested to be mostly to donor-acceptor pair transitions with an acceptor due to copper vacancy and donors due to selenium vacancy or III_Cu antisite. The changes of PL spectra were discussed from the view of the diffusion of elements, especially sulfur from buffer to absorber during the post-annealing process.

Original language	English
Pages (from-to)	595-599
Number of pages	5
Journal	Journal of Luminescence
Volume	188
DOIs	https://doi.org/10.1016/j.jlumin.2017.05.012
Publication status	Published - 2017 Aug

Bibliographical note

Funding Information:
This work was supported by the ‘‘New & Renewable Energy’’ project in the form of a grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Korean Ministry Of Trade, Industry & Energy (20153010011990).

Publisher Copyright:
© 2017 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Biophysics
Biochemistry
Chemistry(all)
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.jlumin.2017.05.012

Cite this

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title = "Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing",

abstract = "The photoluminescence (PL) of Cu(In,Ga)Se2 solar cell with sputtered Zn(O,S) buffer layers annealed at various temperatures were measured. As the annealing temperature increased, the peak positions of PL spectra shifted to higher energies. The broad PL spectra were separated two or three emissions, which are suggested to be mostly to donor-acceptor pair transitions with an acceptor due to copper vacancy and donors due to selenium vacancy or IIICu antisite. The changes of PL spectra were discussed from the view of the diffusion of elements, especially sulfur from buffer to absorber during the post-annealing process.",

author = "Yoonsung Nam and Jengsu Yoo and Chang, {Soo Kyung} and Wi, {Jae Hyung} and Lee, {Woo Jung} and Cho, {Dae Hyung} and Chung, {Yong Duck}",

note = "Funding Information: This work was supported by the {\textquoteleft}{\textquoteleft}New & Renewable Energy{\textquoteright}{\textquoteright} project in the form of a grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Korean Ministry Of Trade, Industry & Energy (20153010011990). Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

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doi = "10.1016/j.jlumin.2017.05.012",

language = "English",

volume = "188",

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journal = "Journal of Luminescence",

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T1 - Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing

AU - Nam, Yoonsung

AU - Yoo, Jengsu

AU - Chang, Soo Kyung

AU - Wi, Jae Hyung

AU - Lee, Woo Jung

AU - Cho, Dae Hyung

AU - Chung, Yong Duck

N1 - Funding Information: This work was supported by the ‘‘New & Renewable Energy’’ project in the form of a grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Korean Ministry Of Trade, Industry & Energy (20153010011990). Publisher Copyright: © 2017 Elsevier B.V.

PY - 2017/8

Y1 - 2017/8

N2 - The photoluminescence (PL) of Cu(In,Ga)Se2 solar cell with sputtered Zn(O,S) buffer layers annealed at various temperatures were measured. As the annealing temperature increased, the peak positions of PL spectra shifted to higher energies. The broad PL spectra were separated two or three emissions, which are suggested to be mostly to donor-acceptor pair transitions with an acceptor due to copper vacancy and donors due to selenium vacancy or IIICu antisite. The changes of PL spectra were discussed from the view of the diffusion of elements, especially sulfur from buffer to absorber during the post-annealing process.

AB - The photoluminescence (PL) of Cu(In,Ga)Se2 solar cell with sputtered Zn(O,S) buffer layers annealed at various temperatures were measured. As the annealing temperature increased, the peak positions of PL spectra shifted to higher energies. The broad PL spectra were separated two or three emissions, which are suggested to be mostly to donor-acceptor pair transitions with an acceptor due to copper vacancy and donors due to selenium vacancy or IIICu antisite. The changes of PL spectra were discussed from the view of the diffusion of elements, especially sulfur from buffer to absorber during the post-annealing process.

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DO - 10.1016/j.jlumin.2017.05.012

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SP - 595

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JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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