Photoluminescence induced by Si-implantation into SiO ₂ layers at elevated temperatures

Si ions at an energy of 70 keV and a dose of 1.5×10 ¹⁶ ions/cm ² were implanted at room and elevated temperatures into 300 nm-thick SiO ₂ layers. The PL spectra showed a broad luminescence band around 600 nm. Higher peak intensities were observed from the sample implanted at elevated substrate temperatures than from those implanted at room temperature. On the contrary, the electron spin resonance signal decrease in intensity as the substrate temperature increases for implantation. From these observations, we conclude that increasing the implantation temperature effectively helps the formation of the radiative recombination centers in the Si-implanted SiO ₂ while reducing the density of non-radiative paramagnetic defects.