Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature

H. B. Kim; J. H. Son; K. H. Chae; J. Y. Jeong; W. S. Lee; S. Im; J. H. Song; C. N. Whang

doi:10.1016/S0921-5107(99)00309-8

Photoluminescence from Si ion irradiated SiO₂/Si/SiO₂ films with elevated substrate temperature

H. B. Kim, J. H. Son, K. H. Chae, J. Y. Jeong, W. S. Lee, S. Im, J. H. Song, C. N. Whang

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Photoluminescence (PL) from the Si ion irradiated SiO₂/Si/SiO₂ layers on Si substrate at room temperature and elevated substrate temperatures has been studied to elucidate the luminescence origins. The irradiation of Si ions into SiO₂/Si/SiO₂ layers instead of SiO₂ films was performed to improve the PL intensity by increasing the number of proper-sized Si nanocrystals. Before annealing at high temperature, a luminescence band around 450 nm is observed. This luminescence band was found to originate from the diamagnetic defect known as B₂ band generated by Si ion irradiation. The intensity of this band increases when ion irradiation is carried out at high substrate temperature. After annealing at high temperature, the PL peaks originating from the B₂ band disappear and a new PL peak appears around 700 nm. This luminescence band is associated with approximately 5-nm sized Si nanocrystals. Also it can be found that the PL peak intensity around 700 nm is significantly increased with the high substrate temperature during ion irradiation. Therefore, it is concluded that ion irradiation into SiO₂/Si/SiO₂ layers is more effective than ion implantation into SiO₂ films to obtain an intensive PL peak originating from Si nanocrystals.

Original language	English
Pages (from-to)	401-405
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	69
DOIs	https://doi.org/10.1016/S0921-5107(99)00309-8
Publication status	Published - 2000 Jan 14
Event	The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France Duration: 1999 Jun 1 → 1999 Jun 4

Bibliographical note

Funding Information:
This work was supported in part by the Korea Science and Engineering Foundation (KOSEF) through the ASSRC at Yonsei University, and in part by the grants from KOSEF (981-0209-035-2).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/S0921-5107(99)00309-8

Cite this

@article{0740d2a983bf451ba1a45cea2a5aeb8e,

title = "Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature",

abstract = "Photoluminescence (PL) from the Si ion irradiated SiO2/Si/SiO2 layers on Si substrate at room temperature and elevated substrate temperatures has been studied to elucidate the luminescence origins. The irradiation of Si ions into SiO2/Si/SiO2 layers instead of SiO2 films was performed to improve the PL intensity by increasing the number of proper-sized Si nanocrystals. Before annealing at high temperature, a luminescence band around 450 nm is observed. This luminescence band was found to originate from the diamagnetic defect known as B2 band generated by Si ion irradiation. The intensity of this band increases when ion irradiation is carried out at high substrate temperature. After annealing at high temperature, the PL peaks originating from the B2 band disappear and a new PL peak appears around 700 nm. This luminescence band is associated with approximately 5-nm sized Si nanocrystals. Also it can be found that the PL peak intensity around 700 nm is significantly increased with the high substrate temperature during ion irradiation. Therefore, it is concluded that ion irradiation into SiO2/Si/SiO2 layers is more effective than ion implantation into SiO2 films to obtain an intensive PL peak originating from Si nanocrystals.",

author = "Kim, {H. B.} and Son, {J. H.} and Chae, {K. H.} and Jeong, {J. Y.} and Lee, {W. S.} and S. Im and Song, {J. H.} and Whang, {C. N.}",

note = "Funding Information: This work was supported in part by the Korea Science and Engineering Foundation (KOSEF) through the ASSRC at Yonsei University, and in part by the grants from KOSEF (981-0209-035-2). ; The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors ; Conference date: 01-06-1999 Through 04-06-1999",

year = "2000",

month = jan,

day = "14",

doi = "10.1016/S0921-5107(99)00309-8",

language = "English",

volume = "69",

pages = "401--405",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Photoluminescence from Si ion irradiated SiO2/Si/SiO2 films with elevated substrate temperature

AU - Kim, H. B.

AU - Son, J. H.

AU - Chae, K. H.

AU - Jeong, J. Y.

AU - Lee, W. S.

AU - Im, S.

AU - Song, J. H.

AU - Whang, C. N.

N1 - Funding Information: This work was supported in part by the Korea Science and Engineering Foundation (KOSEF) through the ASSRC at Yonsei University, and in part by the grants from KOSEF (981-0209-035-2).

PY - 2000/1/14

Y1 - 2000/1/14

N2 - Photoluminescence (PL) from the Si ion irradiated SiO2/Si/SiO2 layers on Si substrate at room temperature and elevated substrate temperatures has been studied to elucidate the luminescence origins. The irradiation of Si ions into SiO2/Si/SiO2 layers instead of SiO2 films was performed to improve the PL intensity by increasing the number of proper-sized Si nanocrystals. Before annealing at high temperature, a luminescence band around 450 nm is observed. This luminescence band was found to originate from the diamagnetic defect known as B2 band generated by Si ion irradiation. The intensity of this band increases when ion irradiation is carried out at high substrate temperature. After annealing at high temperature, the PL peaks originating from the B2 band disappear and a new PL peak appears around 700 nm. This luminescence band is associated with approximately 5-nm sized Si nanocrystals. Also it can be found that the PL peak intensity around 700 nm is significantly increased with the high substrate temperature during ion irradiation. Therefore, it is concluded that ion irradiation into SiO2/Si/SiO2 layers is more effective than ion implantation into SiO2 films to obtain an intensive PL peak originating from Si nanocrystals.

AB - Photoluminescence (PL) from the Si ion irradiated SiO2/Si/SiO2 layers on Si substrate at room temperature and elevated substrate temperatures has been studied to elucidate the luminescence origins. The irradiation of Si ions into SiO2/Si/SiO2 layers instead of SiO2 films was performed to improve the PL intensity by increasing the number of proper-sized Si nanocrystals. Before annealing at high temperature, a luminescence band around 450 nm is observed. This luminescence band was found to originate from the diamagnetic defect known as B2 band generated by Si ion irradiation. The intensity of this band increases when ion irradiation is carried out at high substrate temperature. After annealing at high temperature, the PL peaks originating from the B2 band disappear and a new PL peak appears around 700 nm. This luminescence band is associated with approximately 5-nm sized Si nanocrystals. Also it can be found that the PL peak intensity around 700 nm is significantly increased with the high substrate temperature during ion irradiation. Therefore, it is concluded that ion irradiation into SiO2/Si/SiO2 layers is more effective than ion implantation into SiO2 films to obtain an intensive PL peak originating from Si nanocrystals.

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U2 - 10.1016/S0921-5107(99)00309-8

DO - 10.1016/S0921-5107(99)00309-8

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AN - SCOPUS:0033896109

SN - 0921-5107

VL - 69

SP - 401

EP - 405

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

T2 - The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors

Y2 - 1 June 1999 through 4 June 1999

ER -