Photoluminescence fatigue of ZnSe semiconductor under ultraviolet irradiation

Nguyen Quang Liem; Joo In Lee; Vu Xuan Quang; Do Xuan Thanh; Dongho Kim; Jeong Sik Son; Sam Kyu Noh

doi:10.1016/S0022-0248(00)00126-3

Photoluminescence fatigue of ZnSe semiconductor under ultraviolet irradiation

Nguyen Quang Liem, Joo In Lee, Vu Xuan Quang, Do Xuan Thanh, Dongho Kim, Jeong Sik Son, Sam Kyu Noh

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

At low temperature, ZnSe emits strongly the near-band-edge luminescence consisting of the excitonic emissions and defect-related ones. However, it was observed that these emission lines are strongly fatigued under ultraviolet irradiation. Based on various experiments, we propose a mechanism of photo-induced traps to explain the photoluminescence fatigue phenomenon. These traps are created or enhanced in ZnSe by irradiation of the ultraviolet light with photon energy much above the band gap energy of cubic ZnSe.

Original language	English
Pages (from-to)	441-446
Number of pages	6
Journal	Journal of Crystal Growth
Volume	214
DOIs	https://doi.org/10.1016/S0022-0248(00)00126-3
Publication status	Published - 2000 Jun 2
Event	The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1999 Nov 1 → 1999 Nov 5

Bibliographical note

Funding Information:
The authors are grateful to Dr. P.V. Phuc for his help in X-ray diffraction measurement. This work was supported by Vietnam-NCST and National creative Research Initiatives of Ministry of Science and Technology of Korea. NQL thanks the KOSEF for a fellowship.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(00)00126-3

Cite this

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title = "Photoluminescence fatigue of ZnSe semiconductor under ultraviolet irradiation",

abstract = "At low temperature, ZnSe emits strongly the near-band-edge luminescence consisting of the excitonic emissions and defect-related ones. However, it was observed that these emission lines are strongly fatigued under ultraviolet irradiation. Based on various experiments, we propose a mechanism of photo-induced traps to explain the photoluminescence fatigue phenomenon. These traps are created or enhanced in ZnSe by irradiation of the ultraviolet light with photon energy much above the band gap energy of cubic ZnSe.",

author = "Liem, {Nguyen Quang} and Lee, {Joo In} and Quang, {Vu Xuan} and Thanh, {Do Xuan} and Dongho Kim and Son, {Jeong Sik} and Noh, {Sam Kyu}",

note = "Funding Information: The authors are grateful to Dr. P.V. Phuc for his help in X-ray diffraction measurement. This work was supported by Vietnam-NCST and National creative Research Initiatives of Ministry of Science and Technology of Korea. NQL thanks the KOSEF for a fellowship.; The 9th International Conference on II-VI Compounds ; Conference date: 01-11-1999 Through 05-11-1999",

year = "2000",

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doi = "10.1016/S0022-0248(00)00126-3",

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TY - JOUR

T1 - Photoluminescence fatigue of ZnSe semiconductor under ultraviolet irradiation

AU - Liem, Nguyen Quang

AU - Lee, Joo In

AU - Quang, Vu Xuan

AU - Thanh, Do Xuan

AU - Kim, Dongho

AU - Son, Jeong Sik

AU - Noh, Sam Kyu

N1 - Funding Information: The authors are grateful to Dr. P.V. Phuc for his help in X-ray diffraction measurement. This work was supported by Vietnam-NCST and National creative Research Initiatives of Ministry of Science and Technology of Korea. NQL thanks the KOSEF for a fellowship.

PY - 2000/6/2

Y1 - 2000/6/2

N2 - At low temperature, ZnSe emits strongly the near-band-edge luminescence consisting of the excitonic emissions and defect-related ones. However, it was observed that these emission lines are strongly fatigued under ultraviolet irradiation. Based on various experiments, we propose a mechanism of photo-induced traps to explain the photoluminescence fatigue phenomenon. These traps are created or enhanced in ZnSe by irradiation of the ultraviolet light with photon energy much above the band gap energy of cubic ZnSe.

AB - At low temperature, ZnSe emits strongly the near-band-edge luminescence consisting of the excitonic emissions and defect-related ones. However, it was observed that these emission lines are strongly fatigued under ultraviolet irradiation. Based on various experiments, we propose a mechanism of photo-induced traps to explain the photoluminescence fatigue phenomenon. These traps are created or enhanced in ZnSe by irradiation of the ultraviolet light with photon energy much above the band gap energy of cubic ZnSe.

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U2 - 10.1016/S0022-0248(00)00126-3

DO - 10.1016/S0022-0248(00)00126-3

M3 - Conference article

AN - SCOPUS:0033688031

SN - 0022-0248

VL - 214

SP - 441

EP - 446

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - The 9th International Conference on II-VI Compounds

Y2 - 1 November 1999 through 5 November 1999

ER -

Photoluminescence fatigue of ZnSe semiconductor under ultraviolet irradiation

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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