Photoluminescence decay measurements of ZnSxSe1-x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy

Eun Joo Shin; Joo In Lee; Nguyen Quang Liem; Dongho Kim; Jeong Sik Son; Jae Young Leem; Sam Kyu Noh; Donghan Lee

doi:10.1016/S0038-1098(97)00113-0

Photoluminescence decay measurements of ZnS_xSe_1-x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy

Eun Joo Shin, Joo In Lee, Nguyen Quang Liem, Dongho Kim, Jeong Sik Son, Jae Young Leem, Sam Kyu Noh, Donghan Lee

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The steady-state and time-resolved photoluminescence (PL) studies of ZnS_xSe_1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnS_xSe_1-x epilayers and found that the decay time of the ZnS_xSe_1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe_1-x epilayers.

Original language	English
Pages (from-to)	855-859
Number of pages	5
Journal	Solid State Communications
Volume	102
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1098(97)00113-0
Publication status	Published - 1997 Jun

Bibliographical note

Funding Information:
Acknowledgements-This work was partiallys upported by the Ministry of Science and Technology and the Center for Molecular Science through the Korea Sciencea ndE ngineeringF oundation(K OSEF).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(97)00113-0

Cite this

@article{07e35d1e7ac245c5916b205702b2b04c,

title = "Photoluminescence decay measurements of ZnSxSe1-x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy",

abstract = "The steady-state and time-resolved photoluminescence (PL) studies of ZnSxSe1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnSxSe1-x epilayers and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers.",

author = "Shin, {Eun Joo} and Lee, {Joo In} and Liem, {Nguyen Quang} and Dongho Kim and Son, {Jeong Sik} and Leem, {Jae Young} and Noh, {Sam Kyu} and Donghan Lee",

note = "Funding Information: Acknowledgements-This work was partiallys upported by the Ministry of Science and Technology and the Center for Molecular Science through the Korea Sciencea ndE ngineeringF oundation(K OSEF).",

year = "1997",

month = jun,

doi = "10.1016/S0038-1098(97)00113-0",

language = "English",

volume = "102",

pages = "855--859",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - Photoluminescence decay measurements of ZnSxSe1-x (0 < x < 0.12) epilayers on GaAs substrate grown by molecular beam epitaxy

AU - Shin, Eun Joo

AU - Lee, Joo In

AU - Liem, Nguyen Quang

AU - Kim, Dongho

AU - Son, Jeong Sik

AU - Leem, Jae Young

AU - Noh, Sam Kyu

AU - Lee, Donghan

N1 - Funding Information: Acknowledgements-This work was partiallys upported by the Ministry of Science and Technology and the Center for Molecular Science through the Korea Sciencea ndE ngineeringF oundation(K OSEF).

PY - 1997/6

Y1 - 1997/6

N2 - The steady-state and time-resolved photoluminescence (PL) studies of ZnSxSe1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnSxSe1-x epilayers and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers.

AB - The steady-state and time-resolved photoluminescence (PL) studies of ZnSxSe1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnSxSe1-x epilayers and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers.

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U2 - 10.1016/S0038-1098(97)00113-0

DO - 10.1016/S0038-1098(97)00113-0

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EP - 859

JO - Solid State Communications

JF - Solid State Communications

IS - 12

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