Abstract
Compressively strained InGaAs and InGaAlAs multiple quantum wells were grown on InP by molecular beam epitaxy and their material qualities were investigated by double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL). From the satellite peaks in a DCXRD scan, precise layer structures were determined. By comparing PL spectra of strained quantum wells having different well thicknesses, 75 Å thick quantum wells were found to be more suitable for laser diode applications than thinner wells. To achieve the required lasing wavelength of 1.55 μm with 75 Å wide strained quantum wells, quaternary InGaAlAs quantum wells were studied. It was also found that quaternary InGaAlAs strained quantum wells are less prone to strain relation than ternary InGaAs.
| Original language | English |
|---|---|
| Pages (from-to) | 555-559 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 127 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1993 Feb 2 |
Bibliographical note
Funding Information:This work was supported by the Joint Services Electronics Program through the MIT Research Laboratory of Electronics, Contract DAALO3-92-C-0001, and the Defense Advanced Research Projects Agency through the National Center for Integrated Photonics Technology, Subcontract 542383.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry