Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H2O2 solution as electrolytes

Jung Gyun Song; Moo Whan Shin

doi:10.4028/www.scientific.net/MSF.389-393.957

Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H₂O₂ solution as electrolytes

Jung Gyun Song, Moo Whan Shin

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H₂O₂ solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2001
Editors	S. Yoshida, S. Nishino, H. Harima, T. Kimoto
Publisher	Trans Tech Publications Ltd
Pages	957-960
Number of pages	4
ISBN (Print)	9780878498949
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.389-393.957
Publication status	Published - 2002
Event	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan Duration: 2001 Oct 28 → 2001 Nov 2

Publication series

Name	Materials Science Forum
Volume	389-393
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Country/Territory	Japan
City	Tsukuba
Period	01/10/28 → 01/11/2

Bibliographical note

Publisher Copyright:
© (2002) Trans Tech Publications, Switzerland.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/MSF.389-393.957

Cite this

Song, J. G., & Shin, M. W. (2002). Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H₂O₂ solution as electrolytes. In S. Yoshida, S. Nishino, H. Harima, & T. Kimoto (Eds.), Silicon Carbide and Related Materials 2001 (pp. 957-960). (Materials Science Forum; Vol. 389-393). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.389-393.957

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abstract = "In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27{\AA}. An attempt was made to employ a photoresist as a mask for patterning.",

author = "Song, {Jung Gyun} and Shin, {Moo Whan}",

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Song, JG & Shin, MW 2002, Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H₂O₂ solution as electrolytes. in S Yoshida, S Nishino, H Harima & T Kimoto (eds), Silicon Carbide and Related Materials 2001. Materials Science Forum, vol. 389-393, Trans Tech Publications Ltd, pp. 957-960, International Conference on Silicon Carbide and Related Materials, ICSCRM 2001, Tsukuba, Japan, 01/10/28. https://doi.org/10.4028/www.scientific.net/MSF.389-393.957

Photoelectrochemical etching process of 6H-SiC wafers using HF-based solution and H₂O₂ solution as electrolytes. / Song, Jung Gyun; Shin, Moo Whan.
Silicon Carbide and Related Materials 2001. ed. / S. Yoshida; S. Nishino; H. Harima; T. Kimoto. Trans Tech Publications Ltd, 2002. p. 957-960 (Materials Science Forum; Vol. 389-393).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - In this paper a photoelectrochemical (PEC) etching process for the (611, 4H) - SiC wafers is described. The wet etching process was made using either the HF-based solution or H2O2 solution. The etching characteristics of the two methods were compared. The etching rate was shown to significantly dependent on the wavelength of the UV light and resulted in different etching characteristics for (4H, 6H) - SiC wafer. The root mean square (RMS) roughness of the PEC etched surface was about 27Å. An attempt was made to employ a photoresist as a mask for patterning.

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