Photoelectric, stoichiometric and structural properties of n-ZnO film on p-Si

H. Y. Kim, J. H. Kim, M. O. Park, S. Im

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24 Citations (Scopus)


n-ZnO/p-Si heterojunction photodiodes have been fabricated by sputter deposition of n-ZnO films on p-Si substrates. Substrate temperatures of 300, 400, 500 and 600°C were used for the n-ZnO film deposition using various Ar/O2 ratios from 1:1 to 6:1. All the diodes, except for one obtained at a high substrate temperature of 600°C, show strong rectifying behavior as characterized by current-voltage (I-V) measurement in a dark room. Photoelectric effects from the diodes have been observed under illumination using monochromatic red light with a wavelength of 670 nm. High levels of photocurrent or responsivity were obtained under reverse bias conditions when the stoichiometry of n-ZnO films was improved by optimizing the process conditions, such as the substrate temperature and Ar/O2 ratio. The n-ZnO/p-Si structure prepared at 300°C was found to be unsuitable because photoelectric effects were not apparent from this structure. A heterojunction diode with n-ZnO deposited at 600°C was also found to be unsuitable because the dark leakage current was too high, even though the diode showed photoelectric effects.

Original languageEnglish
Pages (from-to)93-98
Number of pages6
JournalThin Solid Films
Publication statusPublished - 2001 Nov
Event28th International Conference on Metallurgia - San Diego,CA, United States
Duration: 2001 Apr 302001 May 30

Bibliographical note

Funding Information:
This work has been supported by the Brain Korea 21 project and partly supported by Korea Research Foundation (KRF) fund (2000-2-0816).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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