Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

Syed Raza Ali Raza; Young Tack Lee; Youn Gyoung Chang; Pyo Jin Jeon; Jae Hoon Kim; Ryong Ha; Heon Jin Choi; Seongil Im

doi:10.1039/c3cp44027c

Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

Syed Raza Ali Raza, Young Tack Lee, Youn Gyoung Chang, Pyo Jin Jeon, Jae Hoon Kim, Ryong Ha, Heon Jin Choi, Seongil Im

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

Original language	English
Pages (from-to)	2660-2664
Number of pages	5
Journal	Physical Chemistry Chemical Physics
Volume	15
Issue number	8
DOIs	https://doi.org/10.1039/c3cp44027c
Publication status	Published - 2013 Feb 28

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

Access to Document

10.1039/c3cp44027c

Cite this

@article{3c277c95610d468da931ab0c6776d9ea,

title = "Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors",

abstract = "We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.",

author = "Raza, {Syed Raza Ali} and Lee, {Young Tack} and Chang, {Youn Gyoung} and Jeon, {Pyo Jin} and Kim, {Jae Hoon} and Ryong Ha and Choi, {Heon Jin} and Seongil Im",

year = "2013",

month = feb,

day = "28",

doi = "10.1039/c3cp44027c",

language = "English",

volume = "15",

pages = "2660--2664",

journal = "Physical Chemistry Chemical Physics",

issn = "1463-9076",

publisher = "Royal Society of Chemistry",

number = "8",

}

TY - JOUR

T1 - Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

AU - Raza, Syed Raza Ali

AU - Lee, Young Tack

AU - Chang, Youn Gyoung

AU - Jeon, Pyo Jin

AU - Kim, Jae Hoon

AU - Ha, Ryong

AU - Choi, Heon Jin

AU - Im, Seongil

PY - 2013/2/28

Y1 - 2013/2/28

N2 - We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

AB - We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

UR - http://www.scopus.com/inward/record.url?scp=84873293596&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873293596&partnerID=8YFLogxK

U2 - 10.1039/c3cp44027c

DO - 10.1039/c3cp44027c

M3 - Article

C2 - 23340850

AN - SCOPUS:84873293596

SN - 1463-9076

VL - 15

SP - 2660

EP - 2664

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

IS - 8

ER -

Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this