Photoeffects in WO3/GaAs electrode

Ki Hyun Yoon; Jeong Won Lee; Yong Soo Cho; Dong Heon Kang

doi:10.1063/1.363810

Photoeffects in WO₃/GaAs electrode

Ki Hyun Yoon, Jeong Won Lee, Yong Soo Cho, Dong Heon Kang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Photoeffects of a p-type GaAs coated with WO₃ thin film have been investigated as a function of film thickness and photoresponse transients of the WO₃/GaAs electrode were studied. Also, these results were compared to those for a single p-type GaAs electrode. The photocurrent of the WO₃/GaAs electrode depended on the film thickness of the WO₃, showing an optimum photon efficiency for specimens of 800 Å thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates earner movement. For an 800-Å-thick WO₃ thin film deposited p-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single p-type GaAs, which was confirmed as a result of transient behavior. I-V and C-V characteristics of the WO₃/GaAs electrode were also compared with those of a single p-type GaAs electrode.

Original language	English
Pages (from-to)	6813-6818
Number of pages	6
Journal	Journal of Applied Physics
Volume	80
Issue number	12
DOIs	https://doi.org/10.1063/1.363810
Publication status	Published - 1996 Dec 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.363810

Cite this

@article{524395858af14601a067f206253f8c48,

title = "Photoeffects in WO3/GaAs electrode",

abstract = "Photoeffects of a p-type GaAs coated with WO3 thin film have been investigated as a function of film thickness and photoresponse transients of the WO3/GaAs electrode were studied. Also, these results were compared to those for a single p-type GaAs electrode. The photocurrent of the WO3/GaAs electrode depended on the film thickness of the WO3, showing an optimum photon efficiency for specimens of 800 {\AA} thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates earner movement. For an 800-{\AA}-thick WO3 thin film deposited p-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single p-type GaAs, which was confirmed as a result of transient behavior. I-V and C-V characteristics of the WO3/GaAs electrode were also compared with those of a single p-type GaAs electrode.",

author = "Yoon, {Ki Hyun} and Lee, {Jeong Won} and Cho, {Yong Soo} and Kang, {Dong Heon}",

year = "1996",

month = dec,

day = "15",

doi = "10.1063/1.363810",

language = "English",

volume = "80",

pages = "6813--6818",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Photoeffects in WO3/GaAs electrode

AU - Yoon, Ki Hyun

AU - Lee, Jeong Won

AU - Cho, Yong Soo

AU - Kang, Dong Heon

PY - 1996/12/15

Y1 - 1996/12/15

N2 - Photoeffects of a p-type GaAs coated with WO3 thin film have been investigated as a function of film thickness and photoresponse transients of the WO3/GaAs electrode were studied. Also, these results were compared to those for a single p-type GaAs electrode. The photocurrent of the WO3/GaAs electrode depended on the film thickness of the WO3, showing an optimum photon efficiency for specimens of 800 Å thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates earner movement. For an 800-Å-thick WO3 thin film deposited p-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single p-type GaAs, which was confirmed as a result of transient behavior. I-V and C-V characteristics of the WO3/GaAs electrode were also compared with those of a single p-type GaAs electrode.

AB - Photoeffects of a p-type GaAs coated with WO3 thin film have been investigated as a function of film thickness and photoresponse transients of the WO3/GaAs electrode were studied. Also, these results were compared to those for a single p-type GaAs electrode. The photocurrent of the WO3/GaAs electrode depended on the film thickness of the WO3, showing an optimum photon efficiency for specimens of 800 Å thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates earner movement. For an 800-Å-thick WO3 thin film deposited p-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single p-type GaAs, which was confirmed as a result of transient behavior. I-V and C-V characteristics of the WO3/GaAs electrode were also compared with those of a single p-type GaAs electrode.

UR - http://www.scopus.com/inward/record.url?scp=0001571531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001571531&partnerID=8YFLogxK

U2 - 10.1063/1.363810

DO - 10.1063/1.363810

M3 - Article

AN - SCOPUS:0001571531

SN - 0021-8979

VL - 80

SP - 6813

EP - 6818

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Photoeffects in WO₃/GaAs electrode

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this