Phosphorus implantation into in situ doped Ge-on-Si for high light-emitting efficiency

Jiwoong Baek, Bugeun Ki, Daeik Kim, Chulwon Lee, Donguk Nam, Yong Hoon Cho, Jungwoo Oh

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6 Citations (Scopus)


We investigated the optical, electrical, and structural properties of epitaxially grown Ge-on-Si substrates after phosphorous implantation. Ion implantation increases n-type doping in Ge for an on-chip light source. However, its effects on Ge should be carefully studied as implantation may increase the recombination sites, and possibly reduce light-emitting efficiency. We studied the light-emitting efficiency of implanted Ge using various material characterizations. We found that phosphorous implantation increased the doping concentration of in situ doped Ge-on-Si, which boosted the photoluminescence by 12-30%. It is therefore critical to optimize the post-annealing and implantation doses to increase light-emitting efficiency of Ge.

Original languageEnglish
Pages (from-to)2939-2946
Number of pages8
JournalOptical Materials Express
Issue number9
Publication statusPublished - 2016

Bibliographical note

Publisher Copyright:
© 2016 Optical Society of America.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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