Abstract
In this paper, two different shapes of thin film bulk acoustic resonators (TFBARs) are characterized with respect to electrode thickness and overall area, and gold plated on-wafer inductors are employed to tune the TFBAR filter performance. Air-gap type TFBARs are fabricated with aluminum nitride (AIN) as a piezoelectric material and platinum as top and bottom electrodes. Equivalent inductor model is employed for the tuning of fabricated TFBAR bandpass filters designed based on the modified Butterworth-Van Dyke (MBVD) equivalent circuit. Fabricated inductor revealed inductance of 3 nH and Q factor of about 8 at 2 GHz. It is clearly shown that tuning inductor can enlarge the bandwidth of the TFBAR ladder filters about 10 MHz and suppress the out-of-band rejection around 10 dB further.
| Original language | English |
|---|---|
| Pages (from-to) | 1759-1762 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 3 |
| Publication status | Published - 2003 |
| Event | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 2003 Jun 8 → 2003 Jun 13 |
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering