Performance of polygonal-shaped TFBARs and on-wafer tuning inductors

Jong Soo Kim, Kun Wook Kim, Myeong Gweon Gu, Jong Gwan Yook, Han Kyu Park

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


In this paper, two different shapes of thin film bulk acoustic resonators (TFBARs) are characterized with respect to electrode thickness and overall area, and gold plated on-wafer inductors are employed to tune the TFBAR filter performance. Air-gap type TFBARs are fabricated with aluminum nitride (AIN) as a piezoelectric material and platinum as top and bottom electrodes. Equivalent inductor model is employed for the tuning of fabricated TFBAR bandpass filters designed based on the modified Butterworth-Van Dyke (MBVD) equivalent circuit. Fabricated inductor revealed inductance of 3 nH and Q factor of about 8 at 2 GHz. It is clearly shown that tuning inductor can enlarge the bandwidth of the TFBAR ladder filters about 10 MHz and suppress the out-of-band rejection around 10 dB further.

Original languageEnglish
Pages (from-to)1759-1762
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 2003
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: 2003 Jun 82003 Jun 13

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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