Performance enhancement of solution-processed zn-sn-o tfts using high-pressure annealing

Hyun Soo Lim, You Seung Rim, Dong Lim Kim, Hyun Jae Kim

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


In this paper, we investigated the effects of high-pressure annealing (HPA) in solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs). The O2-HPA-treated ZTO TFTs showed higher electrical performances in aspect of an on-current (Ion), saturation mobility (μsat ) and bias stability. The O2-HPA treatment could contribute to the elimination of defect states that originated from the oxygen vacancies in solution-processed metal-oxide films. The 350°C O2-HPA-treated ZTO TFT showed μsat, threshold voltage (Vth), subthreshold slope (S.S) and on/off ratio of 2.35 cm2/V·s, 4.36 V, 0.58 V/dec., and 1.16×107, respectively.

Original languageEnglish
Pages (from-to)1104-1107
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Issue number1
Publication statusPublished - 2012
Event49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States
Duration: 2012 Jun 32012 Jun 8

Bibliographical note

Publisher Copyright:
© 2012 SID.

All Science Journal Classification (ASJC) codes

  • General Engineering


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