Performance enhanced carbon nanotube films by mechanical pressure for a transparent metal oxide thin film field effect transistor

Joohee Jeon; Tae Il Lee; Ji Hyuk Choi; Jyoti Prakash Kar; Won Jin Choi; Hong Koo Baik; Jae Min Myoung

doi:10.1149/1.3505361

Performance enhanced carbon nanotube films by mechanical pressure for a transparent metal oxide thin film field effect transistor

Joohee Jeon, Tae Il Lee, Ji Hyuk Choi, Jyoti Prakash Kar, Won Jin Choi, Hong Koo Baik, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The possible use of single wall carbon nanotube (SWCNT) network thin films as electrode materials in a soluble zinc tin oxide (ZTO) thin film transistor was examined. A mechanical soft pressing method was also introduced to enhance electrical performance without requiring any acid-based post-treatments. Electrical ohmic contacts were observed between the ZTO and SWCNTs and the fabricated device showed good switching characteristics. Using a 100 kPa soft pressing, the contact resistance between ZTO and SWCNTs was reduced by 30% and the on-current level of transparent thin film transistor was enhanced twofold over a similar device that received no pressing.

Original language	English
Pages (from-to)	H76-H79
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	2
DOIs	https://doi.org/10.1149/1.3505361
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3505361

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abstract = "The possible use of single wall carbon nanotube (SWCNT) network thin films as electrode materials in a soluble zinc tin oxide (ZTO) thin film transistor was examined. A mechanical soft pressing method was also introduced to enhance electrical performance without requiring any acid-based post-treatments. Electrical ohmic contacts were observed between the ZTO and SWCNTs and the fabricated device showed good switching characteristics. Using a 100 kPa soft pressing, the contact resistance between ZTO and SWCNTs was reduced by 30% and the on-current level of transparent thin film transistor was enhanced twofold over a similar device that received no pressing.",

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AU - Jeon, Joohee

AU - Lee, Tae Il

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AU - Kar, Jyoti Prakash

AU - Choi, Won Jin

AU - Baik, Hong Koo

AU - Myoung, Jae Min

PY - 2011

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AB - The possible use of single wall carbon nanotube (SWCNT) network thin films as electrode materials in a soluble zinc tin oxide (ZTO) thin film transistor was examined. A mechanical soft pressing method was also introduced to enhance electrical performance without requiring any acid-based post-treatments. Electrical ohmic contacts were observed between the ZTO and SWCNTs and the fabricated device showed good switching characteristics. Using a 100 kPa soft pressing, the contact resistance between ZTO and SWCNTs was reduced by 30% and the on-current level of transparent thin film transistor was enhanced twofold over a similar device that received no pressing.

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Performance enhanced carbon nanotube films by mechanical pressure for a transparent metal oxide thin film field effect transistor

Abstract

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