Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors

Eun Chul Park; Sang Hyun Baek; Taek Sang Song; Jun Bo Yoon; Euisik Yoon

Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors

Eun Chul Park, Sang Hyun Baek, Taek Sang Song, Jun Bo Yoon, Euisik Yoon

Yonsei Advanced Science Institute

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

In this paper we report the performance comparison of 5GHz CMOS VCOs fabricated by 0.18μm six-metal mixed-mode RF CMOS processes with respect to the same VCOs integrated with high Q MEMS inductors. The CMOS inductors implemented by a top-level 2μm-thick AI/Cu metal layer typically show Q factors of about 10, while the MEMS inductors can give much higher Q factors over 25. Differential CMOS VCO circuits have been optimally designed for the respective Q factors of both CMOS and MEMS inductors. Phase noise has been measured and compared for the fabricated VCOs, demonstrating that the VCOs with MEMS inductors can give better phase noise by more than 7dB in the offset frequency range from 30kHz to 3MHz.

Original language	English
Pages (from-to)	721-724
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 2003
Event	2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 2003 Jun 8 → 2003 Jun 13

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{ae77c3628c434dfea2d939ad3dced58b,

title = "Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors",

abstract = "In this paper we report the performance comparison of 5GHz CMOS VCOs fabricated by 0.18μm six-metal mixed-mode RF CMOS processes with respect to the same VCOs integrated with high Q MEMS inductors. The CMOS inductors implemented by a top-level 2μm-thick AI/Cu metal layer typically show Q factors of about 10, while the MEMS inductors can give much higher Q factors over 25. Differential CMOS VCO circuits have been optimally designed for the respective Q factors of both CMOS and MEMS inductors. Phase noise has been measured and compared for the fabricated VCOs, demonstrating that the VCOs with MEMS inductors can give better phase noise by more than 7dB in the offset frequency range from 30kHz to 3MHz.",

author = "Park, {Eun Chul} and Baek, {Sang Hyun} and Song, {Taek Sang} and Yoon, {Jun Bo} and Euisik Yoon",

year = "2003",

language = "English",

volume = "2",

pages = "721--724",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 08-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors

AU - Park, Eun Chul

AU - Baek, Sang Hyun

AU - Song, Taek Sang

AU - Yoon, Jun Bo

AU - Yoon, Euisik

PY - 2003

Y1 - 2003

N2 - In this paper we report the performance comparison of 5GHz CMOS VCOs fabricated by 0.18μm six-metal mixed-mode RF CMOS processes with respect to the same VCOs integrated with high Q MEMS inductors. The CMOS inductors implemented by a top-level 2μm-thick AI/Cu metal layer typically show Q factors of about 10, while the MEMS inductors can give much higher Q factors over 25. Differential CMOS VCO circuits have been optimally designed for the respective Q factors of both CMOS and MEMS inductors. Phase noise has been measured and compared for the fabricated VCOs, demonstrating that the VCOs with MEMS inductors can give better phase noise by more than 7dB in the offset frequency range from 30kHz to 3MHz.

AB - In this paper we report the performance comparison of 5GHz CMOS VCOs fabricated by 0.18μm six-metal mixed-mode RF CMOS processes with respect to the same VCOs integrated with high Q MEMS inductors. The CMOS inductors implemented by a top-level 2μm-thick AI/Cu metal layer typically show Q factors of about 10, while the MEMS inductors can give much higher Q factors over 25. Differential CMOS VCO circuits have been optimally designed for the respective Q factors of both CMOS and MEMS inductors. Phase noise has been measured and compared for the fabricated VCOs, demonstrating that the VCOs with MEMS inductors can give better phase noise by more than 7dB in the offset frequency range from 30kHz to 3MHz.

UR - http://www.scopus.com/inward/record.url?scp=0043095381&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0043095381&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0043095381

SN - 0149-645X

VL - 2

SP - 721

EP - 724

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2003 IEEE MTT-S International Microwave Symposium Digest

Y2 - 8 June 2003 through 13 June 2003

ER -

Performance comparison of 5GHz VCOs integrated by CMOS compatible high Q MEMS inductors

Abstract

All Science Journal Classification (ASJC) codes

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