Pentacene-based low-leakage memory transistor with dielectric/electrolytic/ dielectric polymer layers

Wonjun Choi; Seok Hwan Noh; D. K. Hwang; Jeong M. Choi; Sungjin Jang; Eugene Kim; Seongil Im

doi:10.1149/1.2822888

Pentacene-based low-leakage memory transistor with dielectric/electrolytic/ dielectric polymer layers

Wonjun Choi, Seok Hwan Noh, D. K. Hwang, Jeong M. Choi, Sungjin Jang, Eugene Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We report on the pentacene memory thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP)/poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/PVP triple-layer gate insulator. The top PVP dielectric in the triple layer was intended to provide a smooth hydrophobic surface to ensure good crystalline growth of pentacene channel, while the bottom PVP was for leakage protection. The middle P(VDF/TrFE) layer, known as ferroelectric material, revealed an electrolytic or ion movement signature rather than ferroelectric in our sandwich form of organic insulator. Our TFTs showed remarkably reduced leakage current, good memory window (large threshold voltage shift under slow gate-bias swing), and good field-effect mobility (0.2 cm2 V s). Retention time for the electrolytic memory effects was measured to be more than 104 s under a constant-read condition.

Original language	English
Pages (from-to)	H47-H50
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	3
DOIs	https://doi.org/10.1149/1.2822888
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2822888

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abstract = "We report on the pentacene memory thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP)/poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/PVP triple-layer gate insulator. The top PVP dielectric in the triple layer was intended to provide a smooth hydrophobic surface to ensure good crystalline growth of pentacene channel, while the bottom PVP was for leakage protection. The middle P(VDF/TrFE) layer, known as ferroelectric material, revealed an electrolytic or ion movement signature rather than ferroelectric in our sandwich form of organic insulator. Our TFTs showed remarkably reduced leakage current, good memory window (large threshold voltage shift under slow gate-bias swing), and good field-effect mobility (0.2 cm2 V s). Retention time for the electrolytic memory effects was measured to be more than 104 s under a constant-read condition.",

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AU - Choi, Wonjun

AU - Noh, Seok Hwan

AU - Hwang, D. K.

AU - Choi, Jeong M.

AU - Jang, Sungjin

AU - Kim, Eugene

AU - Im, Seongil

PY - 2008

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N2 - We report on the pentacene memory thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP)/poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/PVP triple-layer gate insulator. The top PVP dielectric in the triple layer was intended to provide a smooth hydrophobic surface to ensure good crystalline growth of pentacene channel, while the bottom PVP was for leakage protection. The middle P(VDF/TrFE) layer, known as ferroelectric material, revealed an electrolytic or ion movement signature rather than ferroelectric in our sandwich form of organic insulator. Our TFTs showed remarkably reduced leakage current, good memory window (large threshold voltage shift under slow gate-bias swing), and good field-effect mobility (0.2 cm2 V s). Retention time for the electrolytic memory effects was measured to be more than 104 s under a constant-read condition.

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Pentacene-based low-leakage memory transistor with dielectric/electrolytic/ dielectric polymer layers

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