PECCS Measurements in Nanostructure FETs

Seongil Im; Youn Gyoung Chang; Jae Kim

doi:10.1007/978-94-007-6392-0_5

PECCS Measurements in Nanostructure FETs

Seongil Im, Youn Gyoung Chang, Jae Kim

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Citation (Scopus)

Abstract

Interfacial trap densities or DOS profiles in nano structure FETs with nano wire (NW) or nano sheet active layer have hardly been investigated due to such difficulties that the measurements would face: how to fabricate and probe the nano FETs. Fortunately, our PECCS using an optical fiber is an appropriate and probably the only method to probe for the nano materials and nano devices. So, in this special section we introduce our PECCS-adopting trap DOS results and band gap-determining study from top-gate ZnO NW FETs and MoS₂ nano sheet FETs [1], respectively.

Original language	English
Title of host publication	SpringerBriefs in Physics
Publisher	Springer VS
Pages	83-97
Number of pages	15
DOIs	https://doi.org/10.1007/978-94-007-6392-0_5
Publication status	Published - 2013

Publication series

Name	SpringerBriefs in Physics
Volume	Part F887
ISSN (Print)	2191-5423
ISSN (Electronic)	2191-5431

Bibliographical note

Publisher Copyright:
© 2013, The Author(s).

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1007/978-94-007-6392-0_5

Cite this

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title = "PECCS Measurements in Nanostructure FETs",

abstract = "Interfacial trap densities or DOS profiles in nano structure FETs with nano wire (NW) or nano sheet active layer have hardly been investigated due to such difficulties that the measurements would face: how to fabricate and probe the nano FETs. Fortunately, our PECCS using an optical fiber is an appropriate and probably the only method to probe for the nano materials and nano devices. So, in this special section we introduce our PECCS-adopting trap DOS results and band gap-determining study from top-gate ZnO NW FETs and MoS2 nano sheet FETs [1], respectively.",

keywords = "DOS, Interfacial trap, Nano FET, Nanosheet, Nanowire, PECCS, ZnO",

author = "Seongil Im and Chang, {Youn Gyoung} and Jae Kim",

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year = "2013",

doi = "10.1007/978-94-007-6392-0_5",

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T1 - PECCS Measurements in Nanostructure FETs

AU - Im, Seongil

AU - Chang, Youn Gyoung

AU - Kim, Jae

PY - 2013

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N2 - Interfacial trap densities or DOS profiles in nano structure FETs with nano wire (NW) or nano sheet active layer have hardly been investigated due to such difficulties that the measurements would face: how to fabricate and probe the nano FETs. Fortunately, our PECCS using an optical fiber is an appropriate and probably the only method to probe for the nano materials and nano devices. So, in this special section we introduce our PECCS-adopting trap DOS results and band gap-determining study from top-gate ZnO NW FETs and MoS2 nano sheet FETs [1], respectively.

AB - Interfacial trap densities or DOS profiles in nano structure FETs with nano wire (NW) or nano sheet active layer have hardly been investigated due to such difficulties that the measurements would face: how to fabricate and probe the nano FETs. Fortunately, our PECCS using an optical fiber is an appropriate and probably the only method to probe for the nano materials and nano devices. So, in this special section we introduce our PECCS-adopting trap DOS results and band gap-determining study from top-gate ZnO NW FETs and MoS2 nano sheet FETs [1], respectively.

KW - DOS

KW - Interfacial trap

KW - Nano FET

KW - Nanosheet

KW - Nanowire

KW - PECCS

KW - ZnO

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M3 - Chapter

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EP - 97

BT - SpringerBriefs in Physics

PB - Springer VS

ER -

PECCS Measurements in Nanostructure FETs

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