Pb(ZrxTi1-x)O3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor

Ho Jung Sun; Eun Seok Choi; Soon Yong Kweon; Nam Kyeong Kim; Seung Jin Yeom; Jae Sung Roh; Hyun Chul Sohn

doi:10.1143/jjap.42.l1504

Pb(Zr_xTi_1-x)O₃ Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO₂ in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor

Ho Jung Sun, Eun Seok Choi, Soon Yong Kweon, Nam Kyeong Kim, Seung Jin Yeom, Jae Sung Roh, Hyun Chul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We investigated a Pb(Zr_xTi_1-x)O₃ (PZT) thin film applied in ferroelectric random access memory (FeRAM) capacitor where under-layered structure was made up of patterned Pt/IrO₂/Ir electrodes separated by inter-electrode dielectric (IED) SiO₂. This capacitor structure is one of the promising candidates for realizing high density FeRAMs. The PZT film grown on IED-SiO₂ appeared to have Pb-deficient pyrochlore phase due to significant Pb-diffusion into IED-SiO ₂, which would make a detrimental effect on PZT film in the capacitor region where the PZT film was grown on isolated Pt electrode, even though growth condition for perovskite PZT film with strong (111) preferred orientation was made when the film was deposited on continuous Pt electrode.

Original language	English
Pages (from-to)	L1504-L1506
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.42.l1504
Publication status	Published - 2003 Dec 15

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Pb(ZrxTi1-x)O3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor",

abstract = "We investigated a Pb(ZrxTi1-x)O3 (PZT) thin film applied in ferroelectric random access memory (FeRAM) capacitor where under-layered structure was made up of patterned Pt/IrO2/Ir electrodes separated by inter-electrode dielectric (IED) SiO2. This capacitor structure is one of the promising candidates for realizing high density FeRAMs. The PZT film grown on IED-SiO2 appeared to have Pb-deficient pyrochlore phase due to significant Pb-diffusion into IED-SiO 2, which would make a detrimental effect on PZT film in the capacitor region where the PZT film was grown on isolated Pt electrode, even though growth condition for perovskite PZT film with strong (111) preferred orientation was made when the film was deposited on continuous Pt electrode.",

author = "Sun, {Ho Jung} and Choi, {Eun Seok} and Kweon, {Soon Yong} and Kim, {Nam Kyeong} and Yeom, {Seung Jin} and Roh, {Jae Sung} and Sohn, {Hyun Chul}",

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doi = "10.1143/jjap.42.l1504",

language = "English",

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T1 - Pb(ZrxTi1-x)O3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor

AU - Sun, Ho Jung

AU - Choi, Eun Seok

AU - Kweon, Soon Yong

AU - Kim, Nam Kyeong

AU - Yeom, Seung Jin

AU - Roh, Jae Sung

AU - Sohn, Hyun Chul

PY - 2003/12/15

Y1 - 2003/12/15

N2 - We investigated a Pb(ZrxTi1-x)O3 (PZT) thin film applied in ferroelectric random access memory (FeRAM) capacitor where under-layered structure was made up of patterned Pt/IrO2/Ir electrodes separated by inter-electrode dielectric (IED) SiO2. This capacitor structure is one of the promising candidates for realizing high density FeRAMs. The PZT film grown on IED-SiO2 appeared to have Pb-deficient pyrochlore phase due to significant Pb-diffusion into IED-SiO 2, which would make a detrimental effect on PZT film in the capacitor region where the PZT film was grown on isolated Pt electrode, even though growth condition for perovskite PZT film with strong (111) preferred orientation was made when the film was deposited on continuous Pt electrode.

AB - We investigated a Pb(ZrxTi1-x)O3 (PZT) thin film applied in ferroelectric random access memory (FeRAM) capacitor where under-layered structure was made up of patterned Pt/IrO2/Ir electrodes separated by inter-electrode dielectric (IED) SiO2. This capacitor structure is one of the promising candidates for realizing high density FeRAMs. The PZT film grown on IED-SiO2 appeared to have Pb-deficient pyrochlore phase due to significant Pb-diffusion into IED-SiO 2, which would make a detrimental effect on PZT film in the capacitor region where the PZT film was grown on isolated Pt electrode, even though growth condition for perovskite PZT film with strong (111) preferred orientation was made when the film was deposited on continuous Pt electrode.

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Pb(Zr_xTi_1-x)O₃ Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO₂ in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor

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