Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes

Kyung Soo Suh; Jong Lam Lee; Hyung Ho Park; Chan Ho Kim; Jae Jin Lee; Kee Soo Nam

doi:10.1016/0921-5107(95)01480-2

Passivation effect of (NH₄)₂S_x treatment on GaAs surface before photo-resist and O₂ processes

Kyung Soo Suh, Jong Lam Lee, Hyung Ho Park, Chan Ho Kim, Jae Jin Lee, Kee Soo Nam

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Surface properties of GaAs passivated with (NH₄)₂S_x solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.

Original language	English
Pages (from-to)	172-176
Number of pages	5
Journal	Materials Science and Engineering B
Volume	37
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(95)01480-2
Publication status	Published - 1996 Feb

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(95)01480-2

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title = "Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes",

abstract = "Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.",

author = "Suh, {Kyung Soo} and Lee, {Jong Lam} and Park, {Hyung Ho} and Kim, {Chan Ho} and Lee, {Jae Jin} and Nam, {Kee Soo}",

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T1 - Passivation effect of (NH4)2Sx treatment on GaAs surface before photo-resist and O2 processes

AU - Suh, Kyung Soo

AU - Lee, Jong Lam

AU - Park, Hyung Ho

AU - Kim, Chan Ho

AU - Lee, Jae Jin

AU - Nam, Kee Soo

PY - 1996/2

Y1 - 1996/2

N2 - Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.

AB - Surface properties of GaAs passivated with (NH4)2Sx solution have been analyzed in GaAs wafer and photoresist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs surface is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions of gallium and arsenic keep almost constant, even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.

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Passivation effect of (NH₄)₂S_x treatment on GaAs surface before photo-resist and O₂ processes

Abstract

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