Page overwritingmethod for performance improvement of NAND flash memories

Samkyu Won; Eui Young Chung; Duckju Kim; Junseop Chung; Bongseok Han; Hyukjun Lee

doi:10.1587/elex.10.20130039

Page overwritingmethod for performance improvement of NAND flash memories

Samkyu Won, Eui Young Chung, Duckju Kim, Junseop Chung, Bongseok Han, Hyukjun Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ~ 47.5 times faster page update time with one overwrite allowance and 1.3 ~ 18.7 with four overwrites allowance compared with conventional method.

Original language	English
Article number	20130039
Journal	ieice electronics express
Volume	10
Issue number	6
DOIs	https://doi.org/10.1587/elex.10.20130039
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1587/elex.10.20130039

Cite this

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title = "Page overwritingmethod for performance improvement of NAND flash memories",

abstract = "This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ~ 47.5 times faster page update time with one overwrite allowance and 1.3 ~ 18.7 with four overwrites allowance compared with conventional method.",

author = "Samkyu Won and Chung, {Eui Young} and Duckju Kim and Junseop Chung and Bongseok Han and Hyukjun Lee",

year = "2013",

doi = "10.1587/elex.10.20130039",

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AU - Won, Samkyu

AU - Chung, Eui Young

AU - Kim, Duckju

AU - Chung, Junseop

AU - Han, Bongseok

AU - Lee, Hyukjun

PY - 2013

Y1 - 2013

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AB - This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ~ 47.5 times faster page update time with one overwrite allowance and 1.3 ~ 18.7 with four overwrites allowance compared with conventional method.

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Page overwritingmethod for performance improvement of NAND flash memories

Abstract

All Science Journal Classification (ASJC) codes

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