This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ~ 47.5 times faster page update time with one overwrite allowance and 1.3 ~ 18.7 with four overwrites allowance compared with conventional method.
|Journal||ieice electronics express|
|Publication status||Published - 2013|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering