Page overwritingmethod for performance improvement of NAND flash memories

Samkyu Won, Eui Young Chung, Duckju Kim, Junseop Chung, Bongseok Han, Hyukjun Lee

Research output: Contribution to journalArticlepeer-review


This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ~ 47.5 times faster page update time with one overwrite allowance and 1.3 ~ 18.7 with four overwrites allowance compared with conventional method.

Original languageEnglish
Article number20130039
Journalieice electronics express
Issue number6
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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