P-type Sb-doped Cu2O Hole Injection Layer Integrated on Transparent ITO Electrode for Acidic PEDOT:PSS-Free Quantum Dot Light Emitting Diodes

Hyeong Jin Seo; Ji Eun Lee; Su Been Heo; Minju Kim; Yeonjin Yi; Seong Jun Kang; Han Ki Kim

doi:10.1002/pssa.201900004

P-type Sb-doped Cu₂O Hole Injection Layer Integrated on Transparent ITO Electrode for Acidic PEDOT:PSS-Free Quantum Dot Light Emitting Diodes

Hyeong Jin Seo, Ji Eun Lee, Su Been Heo, Minju Kim, Yeonjin Yi, Seong Jun Kang, Han Ki Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

It is developed that transparent p-type Sb-doped cuprous oxide (ACO) integrated Sn-doped In₂O₃ (ITO) film as hole injection layer (HIL) and anode combined electrodes for quantum dot light emitting diodes (QD-LEDs) to substitute acidic PEDOT:PSS HIL based electrode. By graded co-sputtering of ACO and ITO targets, the graded p-type ACO buffer layer can be integrated on the surface region of the ITO electrodes. P-type conductivity of the ACO film for acting as effective HIL in QD-LEDs is confirmed by a positive Hall coefficient (1.74 × 10⁻³ ohm cm³/C) and a positive Seebeck constant (115 µV K⁻¹). Due to the well-matched work function of p-type ACO on the ITO electrodes, the acidic PEDOT:PSS-free QD-LEDs exhibited typical current-voltage-luminescence of QD-LEDs. The successful operation of PEDOT:PSS-free QD-LED with p-type ACO integrated ITO electrode indicates that ACO and ITO anode graded sputtering is simpler fabrication steps for cost-effective QD-LEDs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable QD-LEDs.

Original language	English
Article number	1900004
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	216
Issue number	11
DOIs	https://doi.org/10.1002/pssa.201900004
Publication status	Published - 2019 Jun 5

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163010012200). This study also received partial support from a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No. 2018R1A2B2003826).

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.201900004

Cite this

@article{a147c7ad046148c9ad2b9c9300cc94b9,

title = "P-type Sb-doped Cu2O Hole Injection Layer Integrated on Transparent ITO Electrode for Acidic PEDOT:PSS-Free Quantum Dot Light Emitting Diodes",

abstract = "It is developed that transparent p-type Sb-doped cuprous oxide (ACO) integrated Sn-doped In2O3 (ITO) film as hole injection layer (HIL) and anode combined electrodes for quantum dot light emitting diodes (QD-LEDs) to substitute acidic PEDOT:PSS HIL based electrode. By graded co-sputtering of ACO and ITO targets, the graded p-type ACO buffer layer can be integrated on the surface region of the ITO electrodes. P-type conductivity of the ACO film for acting as effective HIL in QD-LEDs is confirmed by a positive Hall coefficient (1.74 × 10−3 ohm cm3/C) and a positive Seebeck constant (115 µV K−1). Due to the well-matched work function of p-type ACO on the ITO electrodes, the acidic PEDOT:PSS-free QD-LEDs exhibited typical current-voltage-luminescence of QD-LEDs. The successful operation of PEDOT:PSS-free QD-LED with p-type ACO integrated ITO electrode indicates that ACO and ITO anode graded sputtering is simpler fabrication steps for cost-effective QD-LEDs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable QD-LEDs.",

author = "Seo, {Hyeong Jin} and Lee, {Ji Eun} and Heo, {Su Been} and Minju Kim and Yeonjin Yi and Kang, {Seong Jun} and Kim, {Han Ki}",

note = "Funding Information: This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163010012200). This study also received partial support from a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No. 2018R1A2B2003826). Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2019",

month = jun,

day = "5",

doi = "10.1002/pssa.201900004",

language = "English",

volume = "216",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "11",

}

TY - JOUR

T1 - P-type Sb-doped Cu2O Hole Injection Layer Integrated on Transparent ITO Electrode for Acidic PEDOT:PSS-Free Quantum Dot Light Emitting Diodes

AU - Seo, Hyeong Jin

AU - Lee, Ji Eun

AU - Heo, Su Been

AU - Kim, Minju

AU - Yi, Yeonjin

AU - Kang, Seong Jun

AU - Kim, Han Ki

N1 - Funding Information: This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163010012200). This study also received partial support from a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No. 2018R1A2B2003826). Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/6/5

Y1 - 2019/6/5

N2 - It is developed that transparent p-type Sb-doped cuprous oxide (ACO) integrated Sn-doped In2O3 (ITO) film as hole injection layer (HIL) and anode combined electrodes for quantum dot light emitting diodes (QD-LEDs) to substitute acidic PEDOT:PSS HIL based electrode. By graded co-sputtering of ACO and ITO targets, the graded p-type ACO buffer layer can be integrated on the surface region of the ITO electrodes. P-type conductivity of the ACO film for acting as effective HIL in QD-LEDs is confirmed by a positive Hall coefficient (1.74 × 10−3 ohm cm3/C) and a positive Seebeck constant (115 µV K−1). Due to the well-matched work function of p-type ACO on the ITO electrodes, the acidic PEDOT:PSS-free QD-LEDs exhibited typical current-voltage-luminescence of QD-LEDs. The successful operation of PEDOT:PSS-free QD-LED with p-type ACO integrated ITO electrode indicates that ACO and ITO anode graded sputtering is simpler fabrication steps for cost-effective QD-LEDs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable QD-LEDs.

AB - It is developed that transparent p-type Sb-doped cuprous oxide (ACO) integrated Sn-doped In2O3 (ITO) film as hole injection layer (HIL) and anode combined electrodes for quantum dot light emitting diodes (QD-LEDs) to substitute acidic PEDOT:PSS HIL based electrode. By graded co-sputtering of ACO and ITO targets, the graded p-type ACO buffer layer can be integrated on the surface region of the ITO electrodes. P-type conductivity of the ACO film for acting as effective HIL in QD-LEDs is confirmed by a positive Hall coefficient (1.74 × 10−3 ohm cm3/C) and a positive Seebeck constant (115 µV K−1). Due to the well-matched work function of p-type ACO on the ITO electrodes, the acidic PEDOT:PSS-free QD-LEDs exhibited typical current-voltage-luminescence of QD-LEDs. The successful operation of PEDOT:PSS-free QD-LED with p-type ACO integrated ITO electrode indicates that ACO and ITO anode graded sputtering is simpler fabrication steps for cost-effective QD-LEDs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable QD-LEDs.

UR - http://www.scopus.com/inward/record.url?scp=85063946994&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063946994&partnerID=8YFLogxK

U2 - 10.1002/pssa.201900004

DO - 10.1002/pssa.201900004

M3 - Article

AN - SCOPUS:85063946994

SN - 1862-6300

VL - 216

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 11

M1 - 1900004

ER -