P-N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices

This study used a spatially controlled boron-doping technique that enables a p-n junction diode to be realized within a single 2D black phosphorus (BP) nanosheet for high-performance photovoltaic application. The reliability of the BP surface and state-of-the-art 2D p-n heterostructure's gated junctions was obtained using the controllable pulsed-plasma process technique. Chemical and structural analyses of the boron-doped BP were performed using X-ray photoelectron spectroscopy, transmission electron microscopy, and first-principles density functional theory (DFT) calculations, and the electrical characteristics of a field-effect transistor based on the p-n heterostructure were determined. The incorporated boron generated high electron density at the BP surface. The electron mobility of BP was significantly enhanced to ∼265 cm ² /V·s for the top gating mode, indicating greatly improved electron transport behavior. Ultraviolet photoelectron spectroscopy and DFT characterizations revealed the occurrence of significant surface charge transfer in the BP. Moreover, the pulsed-plasma boron-doped BP p-n junction devices exhibited high-efficiency photodetection behavior (rise time: 1.2 ms and responsivity: 11.3 mA/W at V _g = 0 V). This study's findings on the tunable nature of the surface-transfer doping scheme reveal that BP is a promising candidate for optoelectronic devices and advanced complementary logic electronics.