TY - JOUR
T1 - P-23
T2 - Solution-processed amorphous lanthanum indium zinc oxide thin-film transistors
AU - Kim, Doo Na
AU - Kim, Dong Lim
AU - Kim, Gun Hee
AU - Kim, Si Joon
AU - Kim, Hyun Jae
PY - 2010/5
Y1 - 2010/5
N2 - In this work, we introduce a solution-processed amorphous lanthanum indium zinc oxide (LIZO) TFT. From the characteristic variation of LIZO films according to La atomic percentage, it was confirmed that additive La atoms suppress the carrier generation by reducing oxygen vacancies. LIZO TFT was optimized at La 5% and its channel mobility, threshold voltage, s-factor, and on-off ratio were 2.64 cm2/Vs, 7.86 V, 0.6 V/dec, and ∼106, respectively. From these results, as substitution material of gallium in IGZO, lanthanum can be used for one of the candidates of carrier controller in IZO system.
AB - In this work, we introduce a solution-processed amorphous lanthanum indium zinc oxide (LIZO) TFT. From the characteristic variation of LIZO films according to La atomic percentage, it was confirmed that additive La atoms suppress the carrier generation by reducing oxygen vacancies. LIZO TFT was optimized at La 5% and its channel mobility, threshold voltage, s-factor, and on-off ratio were 2.64 cm2/Vs, 7.86 V, 0.6 V/dec, and ∼106, respectively. From these results, as substitution material of gallium in IGZO, lanthanum can be used for one of the candidates of carrier controller in IZO system.
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U2 - 10.1889/1.3499912
DO - 10.1889/1.3499912
M3 - Article
AN - SCOPUS:84863302420
SN - 0097-966X
VL - 41 1
SP - 1308
EP - 1311
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
ER -