TY - GEN
T1 - P-23
T2 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
AU - Kim, Doo Na
AU - Kim, Dong Lim
AU - Kim, Gun Wee
AU - Kim, Si Joon
AU - Kim, Hyun Jae
PY - 2010
Y1 - 2010
N2 - In this work, we introduce a solution-processed amorphous lanthanum indium zinc oxide (LIZO) TFT. From the characteristic variation of LIZO films according to La atomic percentage, it was confirmed that additive La atoms suppress the carrier generation by reducing oxygen vacancies. LIZO TFT was optimized at La 5% and its channel mobility, threshold voltage, s-factor, and on-off ratio were 2.64 cm2/Vs, 7.86 V, 0.6 V/dec, and ∼106, respectively. From these results, as substitution material of gallium in IGZO, lanthanum can be used for one of the candidates of carrier controller in IZO system.
AB - In this work, we introduce a solution-processed amorphous lanthanum indium zinc oxide (LIZO) TFT. From the characteristic variation of LIZO films according to La atomic percentage, it was confirmed that additive La atoms suppress the carrier generation by reducing oxygen vacancies. LIZO TFT was optimized at La 5% and its channel mobility, threshold voltage, s-factor, and on-off ratio were 2.64 cm2/Vs, 7.86 V, 0.6 V/dec, and ∼106, respectively. From these results, as substitution material of gallium in IGZO, lanthanum can be used for one of the candidates of carrier controller in IZO system.
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M3 - Conference contribution
AN - SCOPUS:80755168192
SN - 9781618390950
T3 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
SP - 1308
EP - 1311
BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Y2 - 23 May 2010 through 28 May 2010
ER -