P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

Jung Hyeon Bae; Gun Hee Kim; Woong Hee Jeong; Hyun Jae Kim

doi:10.1889/1.3499910

P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

Jung Hyeon Bae, Gun Hee Kim, Woong Hee Jeong, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

Original language	English
Pages (from-to)	1304-1317
Number of pages	14
Journal	Digest of Technical Papers - SID International Symposium
Volume	41 1
DOIs	https://doi.org/10.1889/1.3499910
Publication status	Published - 2010 May

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1889/1.3499910

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title = "P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles",

abstract = "In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.",

author = "Bae, {Jung Hyeon} and Kim, {Gun Hee} and Jeong, {Woong Hee} and Kim, {Hyun Jae}",

year = "2010",

month = may,

doi = "10.1889/1.3499910",

language = "English",

volume = "41 1",

pages = "1304--1317",

journal = "Digest of Technical Papers - SID International Symposium",

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AU - Bae, Jung Hyeon

AU - Kim, Gun Hee

AU - Jeong, Woong Hee

AU - Kim, Hyun Jae

PY - 2010/5

Y1 - 2010/5

N2 - In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

AB - In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.

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JF - Digest of Technical Papers - SID International Symposium

ER -

P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles

Abstract

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