@inproceedings{a2a54f80fb7942c3aab374625f95fabe,
title = "P-22: Memory effects of solution-processed oxide thin-film transistor using ZnO nanoparticles",
abstract = "In this study, we report the study on the non-volatile memory effects of all solution-processed oxide thin film transistor (TFT) with ZnO nanoparticles (NPs) as the charge trapping layer. The transfer characteristics of the device showed a large clockwise hysteresis which can be used to demonstrate its memory function, due to electron trapping in the ZnO NPs charge-trapping layer.",
author = "Bae, {Jung Hyeon} and Kim, {Gun Wee} and Jeong, {Woong Wee} and Kim, {Hyun Jae}",
year = "2010",
language = "English",
isbn = "9781618390950",
series = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",
pages = "1304--1307",
booktitle = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",
note = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 ; Conference date: 23-05-2010 Through 28-05-2010",
}