TY - JOUR
T1 - P-14
T2 - High performance solution-processed IGZO TFTs formed by using a high-pressure annealing method
AU - Rim, You Seung
AU - Kim, Dong Lim
AU - Jeong, Woong Hee
AU - Shin, Hyun Soo
AU - Kim, Hyun Jae
PY - 2011/6
Y1 - 2011/6
N2 - We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 oC, its channel mobility (μFE), threshold voltage (Vth), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm2/Vs, 2.47 V, 0.48 V/dec. and 7.5×106, respectively.
AB - We have developed a noble high-pressure annealing (HPA) method for solution-processed indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). As the pressure increased, the electrical properties of solution-processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal-organic bonding and the density decrease of interface defect states between IGZO channel and SiO2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 oC, its channel mobility (μFE), threshold voltage (Vth), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm2/Vs, 2.47 V, 0.48 V/dec. and 7.5×106, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84863224202&partnerID=8YFLogxK
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U2 - 10.1889/1.3621026
DO - 10.1889/1.3621026
M3 - Article
AN - SCOPUS:84863224202
SN - 0097-966X
VL - 42 1
SP - 1148
EP - 1150
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
ER -