We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.% was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.
|Journal||Japanese Journal of Applied Physics|
|Publication status||Published - 2006 Jan 31|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)