Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate

Do Young Kim; Jong Man Kim; Ji Sim Jung; Jang Yeon Kwon; Hans S. Cho; Kyung Bae Park; Hyuck Lim; Takashi Noguchi

doi:10.1143/JJAP.45.L74

Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate

Do Young Kim, Jong Man Kim, Ji Sim Jung, Jang Yeon Kwon, Hans S. Cho, Kyung Bae Park, Hyuck Lim, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.% was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.

Original language	English
Pages (from-to)	L74-L76
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	1-3
DOIs	https://doi.org/10.1143/JJAP.45.L74
Publication status	Published - 2006 Jan 31

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.L74

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abstract = "We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.% was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.",

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AU - Kim, Do Young

AU - Kim, Jong Man

AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Cho, Hans S.

AU - Park, Kyung Bae

AU - Lim, Hyuck

AU - Noguchi, Takashi

PY - 2006/1/31

Y1 - 2006/1/31

N2 - We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.% was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.

AB - We studied a-Si film deposited by rf sputtering as a precursor material for laser crystallization. The oxygen contents from 4.63 to 16.62 at.% was found in the fairly optimized a-Si films deposited by Xe sputtering. The oxygen gas incorporation increased the surface roughness and exacerbated the Si film agglomeration phenomenon during laser crystallization. The incorporated oxygen atoms in polycrystalline Si (poly-Si) film limit the grain growth of Si atoms below 50 nm.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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ER -

Oxygen effect on laser crystallization of sputtered a-Si film on plastic substrate

Abstract

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